WST4041 P-Channel -40V -6A SOT-23-3L WINSOK MOSFET
Danasîna Giştî
WST4041 MOSFET-a-kanala P-ya hêzdar e ku ji bo karanîna di veguhezerên buckê yên hevdem de hatî çêkirin. Ew xwedan tîrêjek hucreyek bilind e ku destûrê dide RDSON û barkirina dergehê hêja. WST4041 hewcedariyên standardên RoHS û Hilbera Kesk pêk tîne, û ew ji bo performansa pêbawer bi 100% garantiya EAS re tê.
Features
Teknolojiya Xendekên Pêşkeftî tîrêjiya hucreyê ya bilind û barê deriyê super kêm vedihewîne, bi girîngî bandora CdV/dt kêm dike. Amûrên me bi 100% garantiya EAS û vebijarkên hawirdorparêz têne.
Applications
Veguhezkara buckê ya hemdem a bi frekansa bilind, pergala hêza DC-DC ya torê, guheztina barkirinê, e-cixare, kontrolker, amûrên dîjîtal, alavên piçûk ên malê, û elektronîkên xerîdar.
hejmara materyalê ya têkildar
AOS AO3409 AOS3403 AOS3421 AOS3421E AO3401 AOS3401A,dintek DTS4501,ncepower NCE40P05Y,
Parametreyên girîng
| Nîşan | Parametre | Rating | Units |
| VDS | Drain-Source Voltage | -40 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID@TC=25℃ | Berdewam Drain Current, VGS @ -10V1 | -6.0 | A |
| ID@TC=100℃ | Berdewam Drain Current, VGS @ -10V1 | -4.5 | A |
| IDM | Current Drain Pulsed2 | -24 | A |
| EAS | Single Pulse Avalanche Energy3 | 12 | mJ |
| IAS | Avalanche Current | -7 | A |
| PD@TC=25℃ | Tevahiya Hêzê Disipation4 | 1.4 | W |
| TSTG | Range Germahiya Storage | -55 heta 150 | ℃ |
| TJ | Range Germahiya Junction Operating | -55 heta 150 | ℃ |
| Nîşan | Parametre | Şertên | Min. | Tîp. | Max. | Yekbûn |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=-250uA | -40 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Germahiya Germiya | Navnîşana 25℃, ID=-1mA | --- | -0.03 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V, ID=-3A | --- | 30 | 40 | mΩ |
| VGS=-4.5V, ID=-1A | --- | 40 | 58 | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS, ID =-250uA | -0.8 | -1.2 | -2.2 | V |
| △VGS(th) | VGS (th) Germahiya Germiya | --- | 4.56 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=-28V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=-28V, VGS=0V, TJ=55℃ | --- | --- | 5 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=-5V, ID=-3A | --- | 15 | --- | S |
| Rg | Berxwedana Gate | VDS=0V, VGS=0V, f=1MHz | --- | 3.8 | --- | Ω |
| Qg | Tevahiya Barê Deriyê (-4,5V) | VDS=-18V, VGS=-10V, ID=-4A | --- | 9.5 | --- | nC |
| Qgs | Dergeh-Çavkanî Charge | --- | 1.7 | --- | ||
| Qgd | Dergeh-Drain Charge | --- | 2.0 | --- | ||
| Td(li ser) | Demjimêra Dereng-On | VDD=-15V, VGS=-10V, RG=6Ω, ID=-1A, RL=15Ω | --- | 8 | --- | ns |
| Tr | Dema Rabûnê | --- | 10 | --- | ||
| Td(off) | Dema Derengiya Vemirandinê | --- | 18 | --- | ||
| Tf | Fall Time | --- | 8 | --- | ||
| Ciss | Input Capacitance | VDS=-15V, VGS=0V, f=1MHz | --- | 420 | --- | pF |
| Coss | Capacitance Output | --- | 77 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 55 | --- |
