WST2078 N&P Channel 20V/-20V 3.8A/-4.5A SOT-23-6L WINSOK MOSFET
Danasîna Giştî
WST2078 ji bo guheztinên hêza piçûk û sepanên barkirinê MOSFET-a çêtirîn e. Ew xwedan tîrêjek hucreyek bilind e ku RDSON û barê dergehê hêja peyda dike. Ew hewcedariyên RoHS û Hilbera Kesk pêk tîne û ji bo pêbaweriya fonksiyonê ya tevahî hatî pejirandin.
Features
Teknolojiya pêşkeftî ya bi xendekên dendika hucreyê ya bilind, berdêla dergehê pir kêm, û kêmkirina bandorên Cdv/dt. Ev cîhaz di heman demê de jîngehê ye.
Applications
Guhestina hêza piçûk a hemdem a bi frekansa bilind ji bo karanîna di MB/NB/UMPC/VGA, tora pergalên hêzê yên DC-DC, guhêrbarên barkirinê, e-cixare, kontrolker, hilberên dîjîtal, alavên piçûk ên malê, û xerîdar de bêkêmasî ye. elektronîk.
hejmara materyalê ya têkildar
AOS AO6604 AO6608,VISHAY Si3585CDV,PANJIT PJS6601.
Parametreyên girîng
| Nîşan | Parametre | Rating | Units | |
| N-Channel | P-Channel | |||
| VDS | Drain-Source Voltage | 20 | -20 | V |
| VGS | Gate-Source Voltage | ±12 | ±12 | V |
| ID@Tc=25℃ | Berdewam Drain Current, VGS @ 4.5V1 | 3.8 | -4.5 | A |
| ID@Tc=70℃ | Berdewam Drain Current, VGS @ 4.5V1 | 2.8 | -2.6 | A |
| IDM | Current Drain Pulsed2 | 20 | -13 | A |
| PD@TA=25℃ | Tevahiya Hêza Belavkirinê3 | 1.4 | 1.4 | W |
| TSTG | Range Germahiya Storage | -55 heta 150 | -55 heta 150 | ℃ |
| TJ | Range Germahiya Junction Operating | -55 heta 150 | -55 heta 150 | ℃ |
| Nîşan | Parametre | Şertên | Min. | Tîp. | Max. | Yekbûn |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 20 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Germahiya Germiya | Navnîşana 25℃, ID=1mA | --- | 0.024 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=4.5V, ID=3A | --- | 45 | 55 | mΩ |
| VGS=2.5V, ID=1A | --- | 60 | 80 | |||
| VGS=1.8V, ID=1A | --- | 85 | 120 | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS, ID =250uA | 0.5 | 0.7 | 1 | V |
| △VGS(th) | VGS (th) Germahiya Germiya | --- | -2.51 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=16V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=16V, VGS=0V, TJ=55℃ | --- | --- | 5 | |||
| IGSS | Gate-Source Leakage Current | VGS=±8V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=5V, ID=1A | --- | 8 | --- | S |
| Rg | Berxwedana Gate | VDS=0V, VGS=0V, f=1MHz | --- | 2.5 | 3.5 | Ω |
| Qg | Tevahiya Barkirina Deriyê (4,5V) | VDS=10V, VGS=10V, ID=3A | --- | 7.8 | --- | nC |
| Qgs | Dergeh-Çavkanî Charge | --- | 1.5 | --- | ||
| Qgd | Dergeh-Drain Charge | --- | 2.1 | --- | ||
| Td(li ser) | Demjimêra Dereng-On | VDD=10V, VGEN=4.5V, RG=6Ω ID=3A RL=10Ω | --- | 2.4 | 4.3 | ns |
| Tr | Dema Rabûnê | --- | 13 | 23 | ||
| Td(off) | Dema Derengiya Vemirandinê | --- | 15 | 28 | ||
| Tf | Fall Time | --- | 3 | 5.5 | ||
| Ciss | Input Capacitance | VDS=10V, VGS=0V, f=1MHz | --- | 450 | --- | pF |
| Coss | Capacitance Output | --- | 51 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 52 | --- |
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