WST2011 Dual P-Channel -20V -3.2A SOT-23-6L WINSOK MOSFET
Danasîna Giştî
WST2011 MOSFET transîstorên P-ch-ê yên herî pêşkeftî yên berdest in, ku tîrêjiya hucreyê ya bêhempa vedigirin. Ew performansa awarte pêşkêşî dikin, bi RDSON û lêçûna dergehê kêm, wan ji bo veguheztina hêza piçûk û serîlêdanên guheztina barkirinê îdeal dike. Digel vê yekê, WST2011 standardên RoHS û Hilbera Kesk pêk tîne û pesnê erêkirina pêbaweriya tev-fonksiyonê digire.
Features
Teknolojiya Trench-a pêşkeftî rê dide tansiyona hucreyê bilindtir, di encamê de Amûrek Kesk bi Barkirina Deriyê Super Low û kêmbûna bandora CdV/dt ya hêja.
Applications
Veguheztina hêza piçûk a hemdem a bi frekansa bilind ji bo karanîna di MB/NB/UMPC/VGA, tora pergalên hêzê yên DC-DC, guhêrbarên barkirinê, e-cixare, kontrolker, hilberên dîjîtal, alavên piçûk ên malê, û elektronîkên xerîdar de maqûl e. .
hejmara materyalê ya têkildar
LI SER FDC634P, VISHAY Si3443DDV, NXP PMDT670UPE,
Parametreyên girîng
| Nîşan | Parametre | Rating | Units | |
| 10s | Dewleta domdar | |||
| VDS | Drain-Source Voltage | -20 | V | |
| VGS | Gate-Source Voltage | ±12 | V | |
| ID@TA=25℃ | Berdewam Drain Current, VGS @ -4.5V1 | -3.6 | -3.2 | A |
| ID@TA=70℃ | Berdewam Drain Current, VGS @ -4.5V1 | -2.6 | -2.4 | A |
| IDM | Current Drain Pulsed2 | -12 | A | |
| PD@TA=25℃ | Tevahiya Hêza Belavkirinê3 | 1.7 | 1.4 | W |
| PD@TA=70℃ | Tevahiya Hêza Belavkirinê3 | 1.2 | 0.9 | W |
| TSTG | Range Germahiya Storage | -55 heta 150 | ℃ | |
| TJ | Range Germahiya Junction Operating | -55 heta 150 | ℃ | |
| Nîşan | Parametre | Şertên | Min. | Tîp. | Max. | Yekbûn |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=-250uA | -20 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Germahiya Germiya | Navnîşana 25℃, ID=-1mA | --- | -0.011 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V, ID=-2A | --- | 80 | 85 | mΩ |
| VGS=-2.5V, ID=-1A | --- | 95 | 115 | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS, ID =-250uA | -0.5 | -1.0 | -1.5 | V |
| △VGS(th) | VGS (th) Germahiya Germiya | --- | 3.95 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=-16V, VGS=0V, TJ=25℃ | --- | --- | -1 | uA |
| VDS=-16V, VGS=0V, TJ=55℃ | --- | --- | -5 | |||
| IGSS | Gate-Source Leakage Current | VGS=±12V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=-5V, ID=-2A | --- | 8.5 | --- | S |
| Qg | Tevahiya Barê Deriyê (-4,5V) | VDS=-15V, VGS=-4.5V, ID=-2A | --- | 3.3 | 11.3 | nC |
| Qgs | Dergeh-Çavkanî Charge | --- | 1.1 | 1.7 | ||
| Qgd | Dergeh-Drain Charge | --- | 1.1 | 2.9 | ||
| Td(li ser) | Demjimêra Dereng-On | VDD=-15V, VGS=-4.5V, RG=3.3Ω, ID=-2A | --- | 7.2 | --- | ns |
| Tr | Dema Rabûnê | --- | 9.3 | --- | ||
| Td(off) | Dema Derengiya Vemirandinê | --- | 15.4 | --- | ||
| Tf | Fall Time | --- | 3.6 | --- | ||
| Ciss | Input Capacitance | VDS=-15V, VGS=0V, f=1MHz | --- | 750 | --- | pF |
| Coss | Capacitance Output | --- | 95 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 68 | --- |
