WSP6067A N&P-Kanala 60V/-60V 7A/-5A SOP-8 WINSOK MOSFET
Danasîna Giştî
WSP6067A MOSFET ji bo teknolojiya xendek P-ch ya herî pêşkeftî ne, bi tîrêjek pir zêde ya hucreyan. Ew hem di warê RDSON û hem jî ji hêla berdêla dergehê de performansa hêja peyda dikin, ji bo piraniya veguherînerên hevdemî yên hevdemî. Van MOSFET bi pîvanên RoHS û Hilbera Kesk re, digel 100% EAS ku pêbaweriya fonksiyonel a tevahî garantî dike.
Features
Teknolojiya pêşkeftî çêkirina xendeka hucreyê ya bi tîrêjiya bilind pêk tîne, di encamê de barkirina dergehê pir kêm û bandora CdV/dt ya bilindtir hilweşîne. Amûrên me bi 100% garantiya EAS-ê têne û jîngehê ne.
Applications
Veguhezkara Buckê ya Hevdem-Xala Barkêşiya Bilind, Pergala Hêza DC-DC ya Tora, Guhestina barkirinê, cixareyên elektronîkî, şarjkirina bêtêl, motor, drone, alavên bijîjkî, şarjkerên gerîdeyê, kontrolker, amûrên elektronîkî, alavên piçûk ên malê, û elektronîkên xerîdar .
hejmara materyalê ya têkildar
AOS
Parametreyên girîng
| Nîşan | Parametre | Rating | Units | |
| N-Channel | P-Channel | |||
| VDS | Drain-Source Voltage | 60 | -60 | V |
| VGS | Gate-Source Voltage | ±20 | ±20 | V |
| ID@TC=25℃ | Berdewam Drain Current, VGS @ 10V1 | 7.0 | -5.0 | A |
| ID@TC=100℃ | Berdewam Drain Current, VGS @ 10V1 | 4.0 | -2.5 | A |
| IDM | Current Drain Pulsed2 | 28 | -20 | A |
| EAS | Single Pulse Avalanche Energy3 | 22 | 28 | mJ |
| IAS | Avalanche Current | 21 | -24 | A |
| PD@TC=25℃ | Tevahiya Hêzê Disipation4 | 2.0 | 2.0 | W |
| TSTG | Range Germahiya Storage | -55 heta 150 | -55 heta 150 | ℃ |
| TJ | Range Germahiya Junction Operating | -55 heta 150 | -55 heta 150 | ℃ |
| Nîşan | Parametre | Şertên | Min. | Tîp. | Max. | Yekbûn |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 60 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Germahiya Germiya | Navnîşana 25℃, ID=1mA | --- | 0.063 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V, ID=5A | --- | 38 | 52 | mΩ |
| VGS=4.5V, ID=4A | --- | 55 | 75 | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS, ID =250uA | 1 | 2 | 3 | V |
| △VGS(th) | VGS (th) Germahiya Germiya | --- | -5.24 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=48V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=48V, VGS=0V, TJ=55℃ | --- | --- | 5 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=5V, ID=4A | --- | 28 | --- | S |
| Rg | Berxwedana Gate | VDS=0V, VGS=0V, f=1MHz | --- | 2.8 | 4.3 | Ω |
| Qg | Tevahiya Barkirina Deriyê (4,5V) | VDS=48V, VGS=4.5V, ID=4A | --- | 19 | 25 | nC |
| Qgs | Dergeh-Çavkanî Charge | --- | 2.6 | --- | ||
| Qgd | Dergeh-Drain Charge | --- | 4.1 | --- | ||
| Td(li ser) | Demjimêra Dereng-On | VDD=30V, VGS=10V, RG=3.3Ω, ID=1A | --- | 3 | --- | ns |
| Tr | Dema Rabûnê | --- | 34 | --- | ||
| Td(off) | Dema Derengiya Vemirandinê | --- | 23 | --- | ||
| Tf | Fall Time | --- | 6 | --- | ||
| Ciss | Input Capacitance | VDS=15V, VGS=0V, f=1MHz | --- | 1027 | --- | pF |
| Coss | Capacitance Output | --- | 65 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 45 | --- |
