WSP4099 Dual P-Channel -40V -6.5A SOP-8 WINSOK MOSFET
Danasîna Giştî
WSP4099 P-ch MOSFET-a xendekek hêzdar e ku bi tîrêjek hucreyek bilind e.Ew heqê RDSON û dergehek hêja peyda dike, ku ew ji bo pir sepanên veguhezkarê buckê yên hevdemdar maqûl dike.Ew standardên RoHS û GreenProduct bicîh tîne û bi erêkirina pêbaweriya fonksiyonê ya tevahî 100% garantiya EAS heye.
Features
Teknolojiya Xendekê ya pêşkeftî ya bi tîrêjiya hucreya bilind, barkirina dergehê pir kêm, hilweşîna bandora CdV/dt ya hêja û garantiya 100% EAS hemî taybetmendiyên cîhazên me yên kesk in ku bi hêsanî peyda dibin.
Applications
Veguhezkara Buckê ya Hevdem-Xala Bi Frekansa Bilind ji bo MB/NB/UMPC/VGA, Pergala Hêza DC-DC ya Torê, Veguheztina barkirinê, cixareyên elektronîkî, şarjkirina bêtêlê, motor, dron, lênihêrîna bijîşkî, şarjkerên gerîdeyê, kontrolker, hilberên dîjîtal , alavên malê yên piçûk, û elektronîkên xerîdar.
hejmara materyalê ya têkildar
LI SER FDS4685,VISHAY Si4447ADY,TOSHIBA TPC8227-H,PANJIT PJL9835A,Sinopower SM4405BSK,dintek DTM4807,ruichips RU40S4H.
Parametreyên girîng
| Nîşan | Parametre | Rating | Units |
| VDS | Drain-Source Voltage | -40 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID@TC=25℃ | Berdewam Drain Current, -VGS @ -10V1 | -6.5 | A |
| ID@TC=100℃ | Berdewam Drain Current, -VGS @ -10V1 | -4.5 | A |
| IDM | Current Drain Pulsed2 | -22 | A |
| EAS | Single Pulse Avalanche Energy3 | 25 | mJ |
| IAS | Avalanche Current | -10 | A |
| PD@TC=25℃ | Tevahiya Hêzê Disipation4 | 2.0 | W |
| TSTG | Range Germahiya Storage | -55 heta 150 | ℃ |
| TJ | Range Germahiya Junction Operating | -55 heta 150 | ℃ |
| Nîşan | Parametre | Şertên | Min. | Tîp. | Max. | Yekbûn |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=-250uA | -40 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Germahiya Germiya | Navnîşana 25℃, ID=-1mA | --- | -0.02 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-10V, ID=-6.5A | --- | 30 | 38 | mΩ |
| VGS=-4.5V, ID=-4.5A | --- | 46 | 62 | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS, ID =-250uA | -1.5 | -2.0 | -2.5 | V |
| △VGS(th) | VGS (th) Germahiya Germiya | --- | 3.72 | --- | V/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=-32V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=-32V, VGS=0V, TJ=55℃ | --- | --- | 5 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=-5V, ID=-4A | --- | 8 | --- | S |
| Qg | Tevahiya Barkirina Deriyê (-4,5V) | VDS=-20V, VGS=-4.5V, ID=-6.5A | --- | 7.5 | --- | nC |
| Qgs | Dergeh-Çavkanî Charge | --- | 2.4 | --- | ||
| Qgd | Dergeh-Drain Charge | --- | 3.5 | --- | ||
| Td(li ser) | Demjimêra Derengiya Vemirandinê | VDD=-15V, VGS=-10V, RG=6Ω, ID=-1A,RL=20Ω | --- | 8.7 | --- | ns |
| Tr | Dema Rabûnê | --- | 7 | --- | ||
| Td(off) | Dema Derengmayînê Vemirandin | --- | 31 | --- | ||
| Tf | Fall Time | --- | 17 | --- | ||
| Ciss | Input Capacitance | VDS=-15V, VGS=0V, f=1MHz | --- | 668 | --- | pF |
| Coss | Capacitance Output | --- | 98 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 72 | --- |
