WSM340N10G N-kanala 100V 340A TOLL-8L WINSOK MOSFET
Danasîna Giştî
WSM340N10G xendek N-Ch MOSFET-a performansa herî bilind e ku bi dendika hucreyê ya zehf bilind e, ku ji bo piraniya sepanên veguhezkarê buckê yên hevdemî RDSON û dravê dergehek hêja peyda dike.WSM340N10G hewcedariya RoHS û Hilbera Kesk pêk tîne, 100% EAS bi pêbaweriya fonksiyonê ya bêkêmasî ve hatî pejirandin.
Features
Teknolojiya Xendek bi tîrêjiya hucreya bilind a pêşkeftî, Barkirina Deriyê Super Low, Kêmbûna bandora CdV/dt ya hêja, 100% EAS Garantîkirî, Amûra Kesk Berdest e.
Applications
Rastkirina hevdem, Veguhezkarê DC/DC, Guhestina barkirinê, Amûrên bijîjkî, dron, dabînkirina hêza PD, dabînkirina hêza LED, alavên pîşesaziyê, hwd.
Parametreyên girîng
Nirxên herî zêde yên Absolute
| Nîşan | Parametre | Rating | Units |
| VDS | Drain-Source Voltage | 100 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID@TC=25℃ | Berdewam Drain Current, VGS @ 10V | 340 | A |
| ID@TC=100℃ | Berdewam Drain Current, VGS @ 10V | 230 | A |
| IDM | Herikîna Drain Pulsed..TC=25°C | 1150 | A |
| EAS | Enerjiya Avalanche, Nebza Yekane, L=0.5mH | 1800 | mJ |
| IAS | Herika berfê, Nebza yekane, L=0.5mH | 120 | A |
| PD@TC=25℃ | Tevahiya Tevahiya Hêzê | 375 | W |
| PD@TC=100℃ | Tevahiya Tevahiya Hêzê | 187 | W |
| TSTG | Range Germahiya Storage | -55 heta 175 | ℃ |
| TJ | Range Germahiya Junction Operating | 175 | ℃ |
Taybetmendiyên Elektrîkê (TJ=25℃, heya ku wekî din neyê destnîşan kirin)
| Nîşan | Parametre | Şertên | Min. | Tîp. | Max. | Yekbûn |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 100 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Germahiya Germiya | Navnîşana 25℃, ID=1mA | --- | 0.096 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V,ID=50A | --- | 1.6 | 2.3 | mΩ |
| VGS(th) | Gate Threshold Voltage | VGS=VDS, ID =250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS (th) Germahiya Germiya | --- | -5.5 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=85V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=85V, VGS=0V, TJ=55℃ | --- | --- | 10 | |||
| IGSS | Gate-Source Leakage Current | VGS=±25V, VDS=0V | --- | --- | ±100 | nA |
| Rg | Berxwedana Gate | VDS=0V, VGS=0V, f=1MHz | --- | 1.0 | --- | Ω |
| Qg | Tevahiya Barê Deriyê (10V) | VDS=50V, VGS=10V, ID=50A | --- | 260 | --- | nC |
| Qgs | Dergeh-Çavkanî Charge | --- | 80 | --- | ||
| Qgd | Dergeh-Drain Charge | --- | 60 | --- | ||
| Td(li ser) | Demjimêra Derengiya Vemirandinê | VDD=50V, VGS=10V,RG=1Ω,RL=1Ω,IDS=1A. | --- | 88 | --- | ns |
| Tr | Dema Rabûnê | --- | 50 | --- | ||
| Td(off) | Dema Derengmayînê Vemirandin | --- | 228 | --- | ||
| Tf | Fall Time | --- | 322 | --- | ||
| Ciss | Input Capacitance | VDS=40V, VGS=0V, f=1MHz | --- | 13900 | --- | pF |
| Coss | Capacitance Output | --- | 6160 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 220 | --- |
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