WSM320N04G N-kanala 40V 320A TOLL-8L WINSOK MOSFET
Danasîna Giştî
WSM320N04G MOSFETek bi performansa bilind e ku sêwirana xendek bikar tîne û xwedan dendika hucreyek pir bilind e. Ew RDSON û lêçûna dergehek hêja heye û ji bo pir sepanên veguhezkera buckê ya hemdem maqûl e. WSM320N04G daxwazên RoHS û Hilbera Kesk pêk tîne û tê garantî kirin ku 100% EAS û pêbaweriya fonksiyona tevahî heye.
Features
Teknolojiya Trench-a bilind a şaneya bilind a pêşkeftî, di heman demê de ji bo performansa çêtirîn barek deriyê kêm jî vedigire. Wekî din, ew xwedan kêmbûna bandorek CdV / dt ya hêja, 100% Garantiyek EAS û vebijarkek eko-heval e.
Applications
Veguhezkara Buckê ya Hevdem-Xala Barkêşiya Bilind, Pergala Hêza DC-DC ya Torê, Serlêdana Amûra Hêzê, Cixareya Elektronîkî, şarjkirina bêtêl, dron, bijîjkî, şarjkirina gerîdeyê, kontrolker, hilberên dîjîtal, alavên piçûk ên malê, û elektronîkên xerîdar.
Parametreyên girîng
| Nîşan | Parametre | Rating | Units | |
| VDS | Drain-Source Voltage | 40 | V | |
| VGS | Gate-Source Voltage | ±20 | V | |
| ID@TC=25℃ | Berdewam Drain Current, VGS @ 10V1,7 | 320 | A | |
| ID@TC=100℃ | Berdewam Drain Current, VGS @ 10V1,7 | 192 | A | |
| IDM | Current Drain Pulsed2 | 900 | A | |
| EAS | Single Pulse Avalanche Energy3 | 980 | mJ | |
| IAS | Avalanche Current | 70 | A | |
| PD@TC=25℃ | Tevahiya Hêzê Disipation4 | 250 | W | |
| TSTG | Range Germahiya Storage | -55 heta 175 | ℃ | |
| TJ | Range Germahiya Junction Operating | -55 heta 175 | ℃ |
| Nîşan | Parametre | Şertên | Min. | Tîp. | Max. | Yekbûn |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 40 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Germahiya Germiya | Navnîşana 25℃, ID=1mA | --- | 0.050 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V, ID=25A | --- | 1.2 | 1.5 | mΩ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=4.5V, ID=20A | --- | 1.7 | 2.5 | mΩ |
| VGS(th) | Gate Threshold Voltage | VGS=VDS, ID =250uA | 1.2 | 1.7 | 2.6 | V |
| △VGS(th) | VGS (th) Germahiya Germiya | --- | -6.94 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=40V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=40V, VGS=0V, TJ=55℃ | --- | --- | 10 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=5V, ID=50A | --- | 160 | --- | S |
| Rg | Berxwedana Gate | VDS=0V, VGS=0V, f=1MHz | --- | 1.0 | --- | Ω |
| Qg | Tevahiya Barê Deriyê (10V) | VDS=20V, VGS=10V, ID=25A | --- | 130 | --- | nC |
| Qgs | Dergeh-Çavkanî Charge | --- | 43 | --- | ||
| Qgd | Dergeh-Drain Charge | --- | 83 | --- | ||
| Td(li ser) | Demjimêra Dereng-On | VDD=20V, VGEN=4.5V, RG=2.7Ω, ID=1A. | --- | 30 | --- | ns |
| Tr | Dema Rabûnê | --- | 115 | --- | ||
| Td(off) | Dema Derengmayînê Vemirandin | --- | 95 | --- | ||
| Tf | Fall Time | --- | 80 | --- | ||
| Ciss | Input Capacitance | VDS=20V, VGS=0V, f=1MHz | --- | 8100 | --- | pF |
| Coss | Capacitance Output | --- | 1200 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 800 | --- |
