WSF70P02 P-Channel -20V -70A TO-252 WINSOK MOSFET
Danasîna Giştî
WSF70P02 MOSFET amûra xendeqê ya kanala P-ya herî performansê ye ku bi dendika hucreya bilind e. Ew ji bo pir sepanên veguhezkarê buckê yên hevdemî RDSON û berdêla dergehê ya berbiçav pêşkêşî dike. Amûr hewcedariyên RoHS û Hilbera Kesk pêk tîne, 100% EAS garantî ye, û ji bo pêbaweriya fonksiyonê ya tevahî hatî pejirandin.
Features
Teknolojiya Xendekê ya pêşkeftî ya bi dendika hucreyê ya bilind, barkirina dergehê pir kêm, kêmkirina hêja ya bandora CdV / dt, 100% garantiya EAS, û vebijarkên ji bo amûrên hawirdorparêz.
Applications
Bi frekansa Bilind a Point-of-Load Synchronous, Buck Converter ji bo MB/NB/UMPC/VGA, Pergala Hêza DC-DC ya Torê, Guhestina Barkirinê, E-cixare, şarjkirina bêtêlê, motor, dabînkirina hêzê ya acîl, dron, lênihêrîna bijîşkî, şarjkerên gerîdeyê , kontrolker, hilberên dîjîtal, alavên piçûk ên malê, elektronîkên xerîdar.
hejmara materyalê ya têkildar
AOS
Parametreyên girîng
| Nîşan | Parametre | Rating | Units | |
| 10s | Dewleta domdar | |||
| VDS | Drain-Source Voltage | -20 | V | |
| VGS | Gate-Source Voltage | ±12 | V | |
| ID@TC=25℃ | Berdewam Drain Current, VGS @ -10V1 | -70 | A | |
| ID@TC=100℃ | Berdewam Drain Current, VGS @ -10V1 | -36 | A | |
| IDM | Current Drain Pulsed2 | -200 | A | |
| EAS | Single Pulse Avalanche Energy3 | 360 | mJ | |
| IAS | Avalanche Current | -55.4 | A | |
| PD@TC=25℃ | Tevahiya Hêzê Disipation4 | 80 | W | |
| TSTG | Range Germahiya Storage | -55 heta 150 | ℃ | |
| TJ | Range Germahiya Junction Operating | -55 heta 150 | ℃ | |
| Nîşan | Parametre | Şertên | Min. | Tîp. | Max. | Yekbûn |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=-250uA | -20 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Germahiya Germiya | Navnîşana 25℃, ID=-1mA | --- | -0,018 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4.5V, ID=-15A | --- | 6.8 | 9.0 | mΩ |
| VGS=-2.5V, ID=-10A | --- | 8.2 | 11 | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS, ID =-250uA | -0.4 | -0.6 | -1.2 | V |
| △VGS(th) | VGS (th) Germahiya Germiya | --- | 2.94 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=-20V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=-20V, VGS=0V, TJ=55℃ | --- | --- | 5 | |||
| IGSS | Gate-Source Leakage Current | VGS=±12V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=-5V, ID=-10A | --- | 45 | --- | S |
| Qg | Tevahiya Barkirina Deriyê (-4,5V) | VDS=-15V, VGS=-4.5V, ID=-10A | --- | 63 | --- | nC |
| Qgs | Dergeh-Çavkanî Charge | --- | 9.1 | --- | ||
| Qgd | Dergeh-Drain Charge | --- | 13 | --- | ||
| Td(li ser) | Demjimêra Dereng-On | VDD=-10V, VGS=-4.5V, RG=3.3Ω, ID=-10A | --- | 16 | --- | ns |
| Tr | Dema Rabûnê | --- | 77 | --- | ||
| Td(off) | Dema Derengmayînê Vemirandin | --- | 195 | --- | ||
| Tf | Fall Time | --- | 186 | --- | ||
| Ciss | Input Capacitance | VDS=-10V, VGS=0V, f=1MHz | --- | 5783 | --- | pF |
| Coss | Capacitance Output | --- | 520 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 445 | --- |
