WSF6012 N&P-Kanala 60V/-60V 20A/-15A TO-252-4L WINSOK MOSFET
Danasîna Giştî
WSF6012 MOSFET amûrek bi performansa bilind e ku bi sêwirana dendika hucreya bilind e. Ew ji bo pir sepanên veguhezkarê hevdemî yên hevdemî RDSON û lêçûna dergehê ya hêja peyda dike. Wekî din, ew hewcedariyên RoHS û Hilbera Kesk bicîh tîne, û ji bo fonksiyon û pêbaweriya tam bi 100% garantiya EAS tê.
Features
Teknolojiya Xendekê ya Pêşketî ya Bi Tîrêjiya Hucreya Bilind, Barkirina Deriyê Super Kêm, Kêmbûna Bandora CdV/dt ya Berbiçav, 100% Garantiya EAS, û Vebijarkên Amûra Dostaniya Jîngehê.
Applications
Veguhezkara Buckê ya Hevdem-Xala Barkirinê ya Bilind, Pergala Hêza DC-DC ya Torê, Guhestina Barkirinê, E-cixare, şarjkirina bêtêlê, motor, dabînkirina hêza acîl, dron, lênihêrîna tenduristî, şarjkerên gerîdeyê, kontrolker, cîhazên dîjîtal, alavên piçûk ên malê, û elektronîk xerîdar.
hejmara materyalê ya têkildar
AOS AOD603A,
Parametreyên girîng
| Nîşan | Parametre | Rating | Units | |
| N-Channel | P-Channel | |||
| VDS | Drain-Source Voltage | 60 | -60 | V |
| VGS | Gate-Source Voltage | ±20 | ±20 | V |
| ID@TC=25℃ | Berdewam Drain Current, VGS @ 10V1 | 20 | -15 | A |
| ID@TC=70℃ | Berdewam Drain Current, VGS @ 10V1 | 15 | -10 | A |
| IDM | Current Drain Pulsed2 | 46 | -36 | A |
| EAS | Single Pulse Avalanche Energy3 | 200 | 180 | mJ |
| IAS | Avalanche Current | 59 | -50 | A |
| PD@TC=25℃ | Tevahiya Hêzê Disipation4 | 34.7 | 34.7 | W |
| TSTG | Range Germahiya Storage | -55 heta 150 | -55 heta 150 | ℃ |
| TJ | Range Germahiya Junction Operating | -55 heta 150 | -55 heta 150 | ℃ |
| Nîşan | Parametre | Şertên | Min. | Tîp. | Max. | Yekbûn |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 60 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Germahiya Germiya | Navnîşana 25℃, ID=1mA | --- | 0.063 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V, ID=8A | --- | 28 | 37 | mΩ |
| VGS=4.5V, ID=5A | --- | 37 | 45 | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS, ID =250uA | 1 | --- | 2.5 | V |
| △VGS(th) | VGS (th) Germahiya Germiya | --- | -5.24 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=48V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=48V, VGS=0V, TJ=55℃ | --- | --- | 5 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=5V, ID=8A | --- | 21 | --- | S |
| Rg | Berxwedana Gate | VDS=0V, VGS=0V, f=1MHz | --- | 3.0 | 4.5 | Ω |
| Qg | Tevahiya Barkirina Deriyê (4,5V) | VDS=48V, VGS=4.5V, ID=8A | --- | 12.6 | 20 | nC |
| Qgs | Dergeh-Çavkanî Charge | --- | 3.5 | --- | ||
| Qgd | Dergeh-Drain Charge | --- | 6.3 | --- | ||
| Td(li ser) | Demjimêra Dereng-On | VDD=30V, VGS=4.5V, RG=3.3Ω, ID=1A | --- | 8 | --- | ns |
| Tr | Dema Rabûnê | --- | 14.2 | --- | ||
| Td(off) | Dema Derengiya Vemirandinê | --- | 24.6 | --- | ||
| Tf | Fall Time | --- | 4.6 | --- | ||
| Ciss | Input Capacitance | VDS=15V, VGS=0V, f=1MHz | --- | 670 | --- | pF |
| Coss | Capacitance Output | --- | 70 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 35 | --- |
