WSD80100DN56 N-kanala 80V 100A DFN5X6-8 WINSOK MOSFET
Pêşniyara hilberê WINSOK MOSFET
Voltaja WSD80100DN56 MOSFET 80V e, niha 100A ye, berxwedan 6.1mΩ ye, kanal kanalek N e, û pakêt DFN5X6-8 e.
Herêmên serîlêdanê yên WINSOK MOSFET
Dronên MOSFET, motorên MOSFET, elektronîkên otobusê MOSFET, amûrên sereke MOSFET.
WINSOK MOSFET bi hejmarên din ên materyalê yên brandê re têkildar e
AOS MOSFET AON6276,AONS62814T.STMikroelektronîk MOSFET STL1N8F7.POTENS Semiconductor MOSFET PDC7966X.
Parametreyên MOSFET
| Nîşan | Parametre | Rating | Units |
| VDS | Drain-Source Voltage | 80 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| TJ | Germahiya herî zêde ya Junction | 150 | °C |
| ID | Range Germahiya Storage | -55 heta 150 | °C |
| ID | Berdewam Drain Current, VGS=10V,TC=25°C | 100 | A |
| Berdewam Drain Current, VGS=10V,TC=100°C | 80 | A | |
| IDM | Hêza Drainê ya Pulsed, TC=25°C | 380 | A |
| PD | Belavbûna Hêza herî zêde, TC=25°C | 200 | W |
| RqJC | Berxwedana Termal-Junction to Case | 0.8 | °C |
| EAS | Enerjiya Avalanche, Nebza Yekane, L=0.5mH | 800 | mJ |
| Nîşan | Parametre | Şertên | Min. | Tîp. | Max. | Yekbûn |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 80 | --- | --- | V |
| △BVDSS/△TJ | BVDSSGermahiya Germiya | Çavkanî ji bo 25℃, ID=1 mA | --- | 0.043 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V, ID=40A | --- | 6.1 | 8.5 | mΩ |
| VGS(th) | Gate Threshold Voltage | VGS=VDS, ID=250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS(th)Germahiya Germiya | --- | -6.94 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=48V, VGS=0V, TJ=25℃ | --- | --- | 2 | uA |
| VDS=48V, VGS=0V, TJ=55℃ | --- | --- | 10 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS= 5V, ID=20A | 80 | --- | --- | S |
| Qg | Tevahiya Barê Deriyê (10V) | VDS=30V, VGS=10V, ID=30A | --- | 125 | --- | nC |
| Qgs | Dergeh-Çavkanî Charge | --- | 24 | --- | ||
| Qgd | Dergeh-Drain Charge | --- | 30 | --- | ||
| Td(li ser) | Demjimêra Derengiya Vemirandinê | VDD=30V, VGS=10V, RG=2.5Ω, ID=2A,RL=15Ω. | --- | 20 | --- | ns |
| Tr | Dema Rabûnê | --- | 19 | --- | ||
| Td(off) | Dema Derengmayînê Vemirandin | --- | 70 | --- | ||
| Tf | Fall Time | --- | 30 | --- | ||
| Ciss | Input Capacitance | VDS=25V, VGS=0V, f=1MHz | --- | 4900 | --- | pF |
| Coss | Capacitance Output | --- | 410 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 315 | --- |
