WSD80100DN56 N-kanala 80V 100A DFN5X6-8 WINSOK MOSFET

berhemên

WSD80100DN56 N-kanala 80V 100A DFN5X6-8 WINSOK MOSFET

şiroveya kurt:

Hejmara Beşê:WSD80100DN56

BVDSS:80V

Nasname:100A

RDSON:6.1 mΩ

Qenal:N-kanala

Pakêt:DFN5X6-8


Detail Product

Bikaranînî

Tags Product

Pêşniyara hilberê WINSOK MOSFET

Voltaja WSD80100DN56 MOSFET 80V e, niha 100A ye, berxwedan 6.1mΩ ye, kanal kanalek N e, û pakêt DFN5X6-8 e.

Herêmên serîlêdanê yên WINSOK MOSFET

Dronên MOSFET, motorên MOSFET, elektronîkên otobusê MOSFET, amûrên sereke MOSFET.

WINSOK MOSFET bi hejmarên din ên materyalê yên marqeyê re têkildar e

AOS MOSFET AON6276,AONS62814T.STMikroelektronîk MOSFET STL1N8F7.POTENS Semiconductor MOSFET PDC7966X.

Parametreyên MOSFET

Nîşan

Parametre

Rating

Units

VDS

Drain-Source Voltage

80

V

VGS

Gate-Source Voltage

±20

V

TJ

Germahiya herî zêde ya Junction

150

°C

ID

Range Germahiya Storage

-55 heta 150

°C

ID

Berdewam Drain Current, VGS=10V,TC=25°C

100

A

Berdewam Drain Current, VGS=10V,TC=100°C

80

A

IDM

Hêza Drainê ya Pulsed, TC=25°C

380

A

PD

Belavbûna Hêza herî zêde, TC=25°C

200

W

RqJC

Berxwedana Termal-Junction to Case

0.8

°C

EAS

Enerjiya Avalanche, Nebza Yekane, L=0.5mH

800

mJ

 

Nîşan

Parametre

Şertên

Min.

Tîp.

Max.

Yekbûn

BVDSS

Drain-Source Breakdown Voltage VGS=0V, ID=250uA

80

---

---

V

BVDSS/△TJ

BVDSSGermahiya Germiya Çavkanî ji bo 25, ID=1 mA

---

0.043

---

V/

RDS(ON)

Static Drain-Source On-Resistance2 VGS=10V, ID=40A

---

6.1

8.5

mΩ

VGS(th)

Gate Threshold Voltage VGS=VDS, ID=250uA

2.0

3.0

4.0

V

VGS(th)

VGS(th)Germahiya Germiya

---

-6.94

---

mV/

IDSS

Drain-Source Leakage Current VDS=48V, VGS=0V, TJ=25

---

---

2

uA

VDS=48V, VGS=0V, TJ=55

---

---

10

IGSS

Gate-Source Leakage Current VGS=±20V, VDS=0V

---

---

±100

nA

gfs

Forward Transconductance VDS= 5V, ID=20A

80

---

---

S

Qg

Tevahiya Barê Deriyê (10V) VDS=30V, VGS=10V, ID=30A

---

125

---

nC

Qgs

Dergeh-Çavkanî Charge

---

24

---

Qgd

Dergeh-Drain Charge

---

30

---

Td(li ser)

Demjimêra Dereng-On VDD=30V, VGS=10V,

RG=2.5Ω, ID=2A,RL=15Ω.

---

20

---

ns

Tr

Dema Rabûnê

---

19

---

Td(off)

Dema Derengiya Vemirandinê

---

70

---

Tf

Fall Time

---

30

---

Ciss

Input Capacitance VDS=25V, VGS=0V, f=1MHz

---

4900

---

pF

Coss

Capacitance Output

---

410

---

Crss

Reverse Transfer Capacitance

---

315

---


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