WSD75100DN56 N-kanala 75V 100A DFN5X6-8 WINSOK MOSFET
Pêşniyara hilberê WINSOK MOSFET
Voltaja WSD75100DN56 MOSFET 75V e, niha 100A ye, berxwedan 5.3mΩ ye, kanal kanalek N e, û pakêt DFN5X6-8 e.
Herêmên serîlêdanê yên WINSOK MOSFET
Cixareyên elektronîkî MOSFET, şarjkirina bêtêl MOSFET, dronên MOSFET, lênihêrîna bijîjkî MOSFET, şarjkerên gerîdeyê MOSFET, kontrolker MOSFET, hilberên dîjîtal MOSFET, alavên piçûk ên malê MOSFET, elektronîkên xerîdar MOSFET.
WINSOK MOSFET bi hejmarên din ên materyalê yên brandê re têkildar e
AOS MOSFET AON6276,AON6278,AON628,AON6282,AON6448.Onsemi,FAIRCHILD MOSFET NVMFS6H824N.STMicroelectronics MOSFET STL1N8F7.INFINEON,IR MOSNE7PONSCN3microelectronics FET PDC7966X.
Parametreyên MOSFET
| Nîşan | Parametre | Rating | Units |
| VDS | Drain-Source Voltage | 75 | V |
| VGS | Gate-Source Voltage | ±25 | V |
| TJ | Germahiya herî zêde ya Junction | 150 | °C |
| ID | Range Germahiya Storage | -55 heta 150 | °C |
| IS | Hêza Pêşveçûna Berdewam a Diode, TC=25°C | 50 | A |
| ID | Berdewam Drain Current, VGS=10V,TC=25°C | 100 | A |
| Berdewam Drain Current, VGS=10V,TC=100°C | 73 | A | |
| IDM | Hêza Drainê ya Pulsed, TC=25°C | 400 | A |
| PD | Belavbûna Hêza herî zêde, TC=25°C | 155 | W |
| Belavbûna Hêza herî zêde, TC=100°C | 62 | W | |
| RθJA | Berxwedana Termal-Jinction to Ambient ,t =10s ̀ | 20 | °C |
| Berxwedana Termal-Navbera Jîngehê, Dewleta domdar | 60 | °C | |
| RqJC | Berxwedana Termal-Junction to Case | 0.8 | °C |
| IAS | Herika berfê, Nebza yekane, L=0.5mH | 30 | A |
| EAS | Enerjiya Avalanche, Nebza Yekane, L=0.5mH | 225 | mJ |
| Nîşan | Parametre | Şertên | Min. | Tîp. | Max. | Yekbûn |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 75 | --- | --- | V |
| △BVDSS/△TJ | BVDSSGermahiya Germiya | Çavkanî ji bo 25℃, ID=1 mA | --- | 0.043 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V, ID=25A | --- | 5.3 | 6.4 | mΩ |
| VGS(th) | Gate Threshold Voltage | VGS=VDS, ID=250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS(th)Germahiya Germiya | --- | -6.94 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=48V, VGS=0V, TJ=25℃ | --- | --- | 2 | uA |
| VDS=48V, VGS=0V, TJ=55℃ | --- | --- | 10 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS= 5V, ID=20A | --- | 50 | --- | S |
| Rg | Berxwedana Gate | VDS=0V, VGS=0V, f=1MHz | --- | 1.0 | 2 | Ω |
| Qg | Tevahiya Barê Deriyê (10V) | VDS=20V, VGS=10V, ID=40A | --- | 65 | 85 | nC |
| Qgs | Dergeh-Çavkanî Charge | --- | 20 | --- | ||
| Qgd | Dergeh-Drain Charge | --- | 17 | --- | ||
| Td(li ser) | Demjimêra Derengiya Vemirandinê | VDD=30V, VGEN=10V, RG=1Ω, ID=1A,RL=15Ω. | --- | 27 | 49 | ns |
| Tr | Dema Rabûnê | --- | 14 | 26 | ||
| Td(off) | Dema Derengmayînê Vemirandin | --- | 60 | 108 | ||
| Tf | Fall Time | --- | 37 | 67 | ||
| Ciss | Input Capacitance | VDS=20V, VGS=0V, f=1MHz | 3450 | 3500 | 4550 | pF |
| Coss | Capacitance Output | 245 | 395 | 652 | ||
| Crss | Reverse Transfer Capacitance | 100 | 195 | 250 |
