WSD60N12GDN56 N-kanala 120V 70A DFN5X6-8 WINSOK MOSFET

berhemên

WSD60N12GDN56 N-kanala 120V 70A DFN5X6-8 WINSOK MOSFET

şiroveya kurt:

Hejmara Beşê:WSD60N12GDN56

BVDSS:120V

Nasname:70A

RDSON:10mΩ

Qenal:N-kanala

Pakêt:DFN5X6-8


Detail Product

Bikaranînî

Tags Product

Pêşniyara hilberê WINSOK MOSFET

Voltaja WSD60N12GDN56 MOSFET 120V e, niha 70A ye, berxwedan 10mΩ ye, kanal kanalek N e, û pakêt DFN5X6-8 e.

Herêmên serîlêdanê yên WINSOK MOSFET

Amûrên bijîjkî MOSFET, dronên MOSFET, dabînkirina hêza PD MOSFET, dabînkirina hêza LED MOSFET, alavên pîşesaziyê MOSFET.

Qadên serîlêdana MOSFETWINSOK MOSFET bi hejmarên din ên materyalê yên marqe re têkildar e

AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.PANJIT MOSFET PSMQC76N12LS1.POTENS Semiconductor MOSFET PDC974X.

Parametreyên MOSFET

Nîşan

Parametre

Rating

Units

VDS

Drain-Source Voltage

120

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25℃

Current Drain Continuous

70

A

IDP

Pulsed Drain Current

150

A

EAS

Enerjiya Avalanche, Nebza Yekane

53.8

mJ

PD@TC=25℃

Tevahiya Tevahiya Hêzê

140

W

TSTG

Range Germahiya Storage

-55 heta 150

TJ 

Range Germahiya Junction Operating

-55 heta 150

 

Nîşan

Parametre

Şertên

Min.

Tîp.

Max.

Yekbûn

BVDSS 

Drain-Source Breakdown Voltage VGS=0V, ID=250uA

120

---

---

V

  Static Drain-Source On-Resistance VGS=10V,ID=10A.

---

10

15

RDS(ON)

VGS=4.5V,ID=10A.

---

18

25

VGS(th)

Gate Threshold Voltage VGS=VDS, ID=250uA

1.2

---

2.5

V

IDSS

Drain-Source Leakage Current VDS=80V, VGS=0V, TJ=25℃

---

---

1

uA

IGSS

Gate-Source Leakage Current VGS=±20V, VDS=0V

---

---

±100

nA

Qg 

Tevahiya Barê Deriyê (10V) VDS=50V, VGS=10V, ID=25A

---

33

---

nC

Qgs 

Dergeh-Çavkanî Charge

---

5.6

---

Qgd 

Dergeh-Drain Charge

---

7.2

---

Td(li ser)

Demjimêra Dereng-On VDD=50V, VGS=10V,

RG=2Ω, ID=25A

---

22

---

ns

Tr 

Dema Rabûnê

---

10

---

Td(off)

Dema Derengiya Vemirandinê

---

85

---

Tf 

Fall Time

---

112

---

Ciss 

Input Capacitance VDS=50V, VGS=0V, f=1MHz

---

2640

---

pF

Coss

Capacitance Output

---

330

---

Crss 

Reverse Transfer Capacitance

---

11

---

IS 

Berdewam Çavkanî Current VG=VD=0V, Hêza Hêza

---

---

50

A

ISP

Pulsed Çavkanî Current

---

---

150

A

VSD

Diode Forward Voltage VGS=0V, IS=12A, TJ=25℃

---

---

1.3

V

trr 

Demjimêra Reverse Recovery IF=25A,dI/dt=100A/µs,TJ=25℃

---

62

---

nS

Qrr 

Reverse Recovery Charge

---

135

---

nC

 


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