WSD60N10GDN56 N-kanala 100V 60A DFN5X6-8 WINSOK MOSFET
Pêşniyara hilberê WINSOK MOSFET
Voltaja WSD60N10GDN56 MOSFET 100V e, niha 60A ye, berxwedan 8.5mΩ ye, kanal kanalek N e, û pakêt DFN5X6-8 e.
Herêmên serîlêdanê yên WINSOK MOSFET
Cixareyên elektronîkî MOSFET, şarjkirina bêtêl MOSFET, motorên MOSFET, dronên MOSFET, lênihêrîna bijîşkî MOSFET, şarjkerên gerîdeyê MOSFET, kontrolker MOSFET, hilberên dîjîtal MOSFET, amûrên piçûk ên malê MOSFET, elektronîkên xerîdar MOSFET.
Qadên serîlêdana MOSFETWINSOK MOSFET bi hejmarên din ên materyalê yên marqe re têkildar e
AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.Onsemi,FAIRCHILD MOSFET NTMFS6B14N.VISHAY MOSFET SiR84DP,SiR87ONSHI,M ET TPH6R3ANL,TPH8R8ANH.PANJIT MOSFET PJQ5478A.NIKO-SEM MOSFET P81BKA.POTENS Semiconductor MOSFET PDC92X.
Parametreyên MOSFET
| Nîşan | Parametre | Rating | Units |
| VDS | Drain-Source Voltage | 100 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID@TC=25℃ | Current Drain Continuous | 60 | A |
| IDP | Pulsed Drain Current | 210 | A |
| EAS | Enerjiya Avalanche, Nebza Yekane | 100 | mJ |
| PD@TC=25℃ | Tevahiya Tevahiya Hêzê | 125 | W |
| TSTG | Range Germahiya Storage | -55 heta 150 | ℃ |
| TJ | Range Germahiya Junction Operating | -55 heta 150 | ℃ |
| Nîşan | Parametre | Şertên | Min. | Tîp. | Max. | Yekbûn |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 100 | --- | --- | V |
| Static Drain-Source On-Resistance | VGS=10V,ID=10A. | --- | 8.5 | 10. 0 | mΩ | |
| RDS(ON) | VGS=4.5V,ID=10A. | --- | 9.5 | 12. 0 | mΩ | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS, ID=250uA | 1.0 | --- | 2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=80V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| Qg | Tevahiya Barê Deriyê (10V) | VDS=50V, VGS=10V, ID=25A | --- | 49.9 | --- | nC |
| Qgs | Dergeh-Çavkanî Charge | --- | 6.5 | --- | ||
| Qgd | Dergeh-Drain Charge | --- | 12.4 | --- | ||
| Td(li ser) | Demjimêra Dereng-On | VDD=50V, VGS=10V,RG=2.2Ω, ID=25A | --- | 20.6 | --- | ns |
| Tr | Dema Rabûnê | --- | 5 | --- | ||
| Td(off) | Dema Derengiya Vemirandinê | --- | 51.8 | --- | ||
| Tf | Fall Time | --- | 9 | --- | ||
| Ciss | Input Capacitance | VDS=50V, VGS=0V, f=1MHz | --- | 2604 | --- | pF |
| Coss | Capacitance Output | --- | 362 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 6.5 | --- | ||
| IS | Berdewam Çavkanî Current | VG=VD=0V, Hêza Hêza | --- | --- | 60 | A |
| ISP | Pulsed Çavkanî Current | --- | --- | 210 | A | |
| VSD | Diode Forward Voltage | VGS=0V, IS=12A, TJ=25℃ | --- | --- | 1.3 | V |
| trr | Demjimêra Reverse Recovery | IF=12A,dI/dt=100A/µs,TJ=25℃ | --- | 60.4 | --- | nS |
| Qrr | Reverse Recovery Charge | --- | 106.1 | --- | nC |
