WSD45N10GDN56 N-kanala 100V 45A DFN5X6-8 WINSOK MOSFET
Pêşniyara hilberê WINSOK MOSFET
Voltaja WSD45N10GDN56 MOSFET 100V e, niha 45A ye, berxwedan 14.5mΩ ye, kanal kanalek N e, û pakêt DFN5X6-8 e.
Herêmên serîlêdanê yên WINSOK MOSFET
Cixareyên elektronîkî MOSFET, şarjkirina bêtêlê MOSFET, motorên MOSFET, dronên MOSFET, lênihêrîna bijîşkî MOSFET, şarjkerên gerîdeyê MOSFET, kontrolker MOSFET, hilberên dîjîtal MOSFET, amûrên piçûk ên malê MOSFET, elektronîkên xerîdar MOSFET.
WINSOK MOSFET bi hejmarên din ên materyalê yên brandê re têkildar e
AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.PANJIT MOSFET PJQ5476AL.POTENS Semiconductor MOSFET PDC966X.
Parametreyên MOSFET
| Nîşan | Parametre | Rating | Units |
| VDS | Drain-Source Voltage | 100 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID@TC=25℃ | Berdewam Drain Current, VGS@ 10V | 45 | A |
| ID@TC=100℃ | Berdewam Drain Current, VGS@ 10V | 33 | A |
| ID@TA=25℃ | Berdewam Drain Current, VGS@ 10V | 12 | A |
| ID@TA=70℃ | Berdewam Drain Current, VGS@ 10V | 9.6 | A |
| IDMa | Pulsed Drain Current | 130 | A |
| EASb | Enerjiya Avalanche ya Single Pulse | 169 | mJ |
| IASb | Avalanche Current | 26 | A |
| PD@TC=25℃ | Tevahiya Tevahiya Hêzê | 95 | W |
| PD@TA=25℃ | Tevahiya Tevahiya Hêzê | 5.0 | W |
| TSTG | Range Germahiya Storage | -55 heta 150 | ℃ |
| TJ | Range Germahiya Junction Operating | -55 heta 150 | ℃ |
| Nîşan | Parametre | Şertên | Min. | Tîp. | Max. | Yekbûn |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 100 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Germahiya Germiya | Çavkanî ji bo 25℃, ID=1 mA | --- | 0.0 | --- | V/℃ |
| RDS(ON)d | Static Drain-Source On-Resistance2 | VGS=10V, ID=26A | --- | 14.5 | 17.5 | mΩ |
| VGS(th) | Gate Threshold Voltage | VGS=VDS, ID=250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS(th)Germahiya Germiya | --- | -5 | mV/℃ | ||
| IDSS | Drain-Source Leakage Current | VDS=80V, VGS=0V, TJ=25℃ | --- | - | 1 | uA |
| VDS=80V, VGS=0V, TJ=55℃ | --- | - | 30 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS=0V | --- | - | ±100 | nA |
| Rge | Berxwedana Gate | VDS=0V, VGS=0V, f=1MHz | --- | 1.0 | --- | Ω |
| Qge | Tevahiya Barê Deriyê (10V) | VDS=50V, VGS=10V, ID=26A | --- | 42 | 59 | nC |
| Qgse | Dergeh-Çavkanî Charge | --- | 12 | -- | ||
| Qgde | Dergeh-Drain Charge | --- | 12 | --- | ||
| Td(li ser)e | Demjimêra Derengiya Vemirandinê | VDD=30V, VGEN=10V, RG=6Ω ID=1A,RL=30Ω | --- | 19 | 35 | ns |
| Tre | Dema Rabûnê | --- | 9 | 17 | ||
| Td(off)e | Dema Derengmayînê Vemirandin | --- | 36 | 65 | ||
| Tfe | Fall Time | --- | 22 | 40 | ||
| Cisse | Input Capacitance | VDS=30V, VGS=0V, f=1MHz | --- | 1800 | --- | pF |
| Cosse | Capacitance Output | --- | 215 | --- | ||
| Crsse | Reverse Transfer Capacitance | --- | 42 | --- |
