WSD4280DN22 Dual P-kanala -15V -4.6A DFN2X2-6L WINSOK MOSFET
Pêşniyara hilberê WINSOK MOSFET
Voltaja WSD4280DN22 MOSFET -15V e, niha -4.6A ye, berxwedan 47mΩ ye, kanal dual P-kanala ye, û pakêt DFN2X2-6L ye.
Herêmên serîlêdanê yên WINSOK MOSFET
Guhestina astengkirina dualî; Serîlêdanên veguherîna DC-DC;Darkirina batarya Li-ê; MOSFET-cixareya elektronîkî, MOSFET şarjkirina bêtêl, MOSFET şarjkirina gerîdeyê, MOSFET-kontrolker, hilbera dîjîtal MOSFET, amûrên piçûk ên malê MOSFET, MOSFET elektronîkên xerîdar.
WINSOK MOSFET bi hejmarên din ên materyalê yên marqeyê re têkildar e
PANJIT MOSFET PJQ2815
Parametreyên MOSFET
| Nîşan | Parametre | Rating | Units |
| VDS | Drain-Source Voltage | -15 | V |
| VGS | Gate-Source Voltage | ±8 | V |
| ID@Tc=25℃ | Berdewam Drain Current, VGS= -4,5V1 | -4.6 | A |
| IDM | 300μS Hêza Derxistina Pulsed, (VGS=-4,5V) | -15 | A |
| PD | Belavbûna hêzê li jor TA = 25°C (Têbînî 2) | 1.9 | W |
| TSTG, TJ | Range Germahiya Storage | -55 heta 150 | ℃ |
| RthJA | Berxwedana Termal Junction-ambient1 | 65 | ℃/W |
| RθJC | Berxwedana Termal Junction-Case1 | 50 | ℃/W |
Taybetmendiyên Elektrîkê (TJ=25 ℃, heya ku wekî din neyê destnîşan kirin)
| Nîşan | Parametre | Şertên | Min. | Tîp. | Max. | Yekbûn |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=-250uA | -15 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Germahiya Germiya | Çavkanî ji bo 25℃, ID=-1 mA | --- | -0.01 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=-4,5V, ID=-1A | --- | 47 | 61 | mΩ |
| VGS=-2,5V, ID=-1A | --- | 61 | 80 | |||
| VGS=-1,8V, ID=-1A | --- | 90 | 150 | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS, ID=-250uA | -0.4 | -0.62 | -1.2 | V |
| △VGS(th) | VGS(th)Germahiya Germiya | --- | 3.13 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=-10V, VGS=0V, TJ=25℃ | --- | --- | -1 | uA |
| VDS=-10V, VGS=0V, TJ=55℃ | --- | --- | -5 | |||
| IGSS | Gate-Source Leakage Current | VGS=±12V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=-5V, ID=-1A | --- | 10 | --- | S |
| Rg | Berxwedana Gate | VDS=0V, VGS=0V, f=1MHz | --- | 2 | --- | Ω |
| Qg | Tevahiya Barkirina Deriyê (-4,5V) | VDS=-10V, VGS=-4,5V, ID=-4,6A | --- | 9.5 | --- | nC |
| Qgs | Dergeh-Çavkanî Charge | --- | 1.4 | --- | ||
| Qgd | Dergeh-Drain Charge | --- | 2.3 | --- | ||
| Td(li ser) | Demjimêra Dereng-On | VDD=-10V,VGS=-4,5V, RG=1Ω ID=-3.9A, | --- | 15 | --- | ns |
| Tr | Dema Rabûnê | --- | 16 | --- | ||
| Td(off) | Dema Derengmayînê Vemirandin | --- | 30 | --- | ||
| Tf | Fall Time | --- | 10 | --- | ||
| Ciss | Input Capacitance | VDS=-10V, VGS=0V, f=1MHz | --- | 781 | --- | pF |
| Coss | Capacitance Output | --- | 98 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 96 | --- |
