WSD4080DN56 N-kanala 40V 85A DFN5X6-8 WINSOK MOSFET
Pêşniyara hilberê WINSOK MOSFET
Voltaja WSD4080DN56 MOSFET 40V e, niha 85A ye, berxwedan 4.5mΩ ye, kanal kanalek N e, û pakêt DFN5X6-8 e.
Herêmên serîlêdanê yên WINSOK MOSFET
Amûrên piçûk MOSFET, alavên destan MOSFET, motorên MOSFET.
WINSOK MOSFET bi hejmarên din ên materyalê yên marqeyê re têkildar e
AOS MOSFET AON623.STMicroelectronics MOSFET STL52DN4LF7AG,STL64DN4F7AG,STL64N4F7AG.PANJIT MOSFET PJQ5442.POTENS Semiconductor MOSFET PDC496X.
Parametreyên MOSFET
| Nîşan | Parametre | Rating | Units |
| VDS | Drain-Source Voltage | 40 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID@TC=25℃ | Berdewam Drain Current, VGS @ 10V1 | 85 | A |
| ID@TC=100℃ | Berdewam Drain Current, VGS @ 10V1 | 58 | A |
| IDM | Pulsed Drain Current2 | 100 | A |
| EAS | Enerjiya Avalanche ya Single Pulse3 | 110.5 | mJ |
| IAS | Avalanche Current | 47 | A |
| PD@TC=25℃ | Tevahiya Tevahiya Hêzê4 | 52.1 | W |
| TSTG | Range Germahiya Storage | -55 heta 150 | ℃ |
| TJ | Range Germahiya Junction Operating | -55 heta 150 | ℃ |
| RthJA | Berxwedana Termal Junction-Ambient1 | 62 | ℃/W |
| RθJC | Berxwedana Termal Junction-Case1 | 2.4 | ℃/W |
| Nîşan | Parametre | Şertên | Min. | Tîp. | Max. | Yekbûn |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 40 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V, ID=10A | --- | 4.5 | 6.5 | mΩ |
| VGS=4.5V, ID=5A | --- | 6.4 | 8.5 | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS, ID =250uA | 1.0 | --- | 2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=32V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=32V, VGS=0V, TJ=55℃ | --- | --- | 5 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=10V, ID=5A | --- | 27 | --- | S |
| Qg | Tevahiya Barkirina Deriyê (4.5V) | VDS=20V, VGS=4.5V, ID=10A | --- | 20 | --- | nC |
| Qgs | Dergeh-Çavkanî Charge | --- | 5.8 | --- | ||
| Qgd | Dergeh-Drain Charge | --- | 9.5 | --- | ||
| Td(li ser) | Demjimêra Dereng-On | VDD=15V, VGS=10V RG=3.3ΩNasname=1A | --- | 15.2 | --- | ns |
| Tr | Dema Rabûnê | --- | 8.8 | --- | ||
| Td(off) | Dema Derengmayînê Vemirandin | --- | 74 | --- | ||
| Tf | Fall Time | --- | 7 | --- | ||
| Ciss | Input Capacitance | VDS=15V, VGS=0V, f=1MHz | --- | 2354 | --- | pF |
| Coss | Capacitance Output | --- | 215 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 175 | --- | ||
| IS | Berdewam Çavkanî Current1,5 | VG=VD=0V, Hêza Hêza | --- | --- | 70 | A |
| VSD | Diode Forward Voltage2 | VGS=0V, IS=1A, TJ=25℃ | --- | --- | 1 | V |
