WSD40200DN56G N-kanala 40V 180A DFN5X6-8 WINSOK MOSFET
Pêşniyara hilberê WINSOK MOSFET
Voltaja WSD40120DN56G MOSFET 40V e, niha 120A ye, berxwedan 1.4mΩ ye, kanal kanalek N e, û pakêt DFN5X6-8 e.
Herêmên serîlêdanê yên WINSOK MOSFET
Cixareyên elektronîkî MOSFET, şarjkirina bêtêl MOSFET, dronên MOSFET, lênihêrîna bijîjkî MOSFET, şarjkerên gerîdeyê MOSFET, kontrolker MOSFET, hilberên dîjîtal MOSFET, alavên piçûk ên malê MOSFET, elektronîkên xerîdar MOSFET.
WINSOK MOSFET bi hejmarên din ên materyalê yên brandê re têkildar e
AOS MOSFET AON6234,AON6232,AON623.STMikroelektronîk MOSFET STL14N4F7AG.POTENS Semiconductor MOSFET PDC496X.
Parametreyên MOSFET
| Nîşan | Parametre | Rating | Units |
| VDS | Drain-Source Voltage | 40 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID@TC=25℃ | Berdewam Drain Current, VGS@ 10V1 | 120 | A |
| ID@TC=100℃ | Berdewam Drain Current, VGS@ 10V1 | 82 | A |
| IDM | Pulsed Drain Current2 | 400 | A |
| EAS | Enerjiya Avalanche ya Single Pulse3 | 400 | mJ |
| IAS | Avalanche Current | 40 | A |
| PD@TC=25℃ | Tevahiya Tevahiya Hêzê4 | 125 | W |
| TSTG | Range Germahiya Storage | -55 heta 150 | ℃ |
| TJ | Range Germahiya Junction Operating | -55 heta 150 | ℃ |
| Nîşan | Parametre | Şertên | Min. | Tîp. | Max. | Yekbûn |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 40 | --- | --- | V |
| △BVDSS/△TJ | BVDSSGermahiya Germiya | Çavkanî ji bo 25℃, ID=1 mA | --- | 0.043 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V, ID=20A | --- | 1.4 | 1.8 | mΩ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=4.5V, ID=20A | --- | 2.0 | 2.6 | mΩ |
| VGS(th) | Gate Threshold Voltage | VGS=VDS, ID=250uA | 1.2 | 1.6 | 2.2 | V |
| △VGS(th) | VGS(th)Germahiya Germiya | --- | -6.94 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=32V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=32V, VGS=0V, TJ=55℃ | --- | --- | 5 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS= 5V, ID=20A | --- | 53 | --- | S |
| Rg | Berxwedana Gate | VDS=0V, VGS=0V, f=1MHz | --- | 1.0 | --- | Ω |
| Qg | Tevahiya Barê Deriyê (10V) | VDS=15V, VGS=10V, ID=20A | --- | 45 | --- | nC |
| Qgs | Dergeh-Çavkanî Charge | --- | 12 | --- | ||
| Qgd | Dergeh-Drain Charge | --- | 18.5 | --- | ||
| Td(li ser) | Demjimêra Derengiya Vemirandinê | VDD=15V, VGEN=10V, RG=3.3Ω, ID=20A,RL=15Ω. | --- | 18.5 | --- | ns |
| Tr | Dema Rabûnê | --- | 9 | --- | ||
| Td(off) | Dema Derengmayînê Vemirandin | --- | 58.5 | --- | ||
| Tf | Fall Time | --- | 32 | --- | ||
| Ciss | Input Capacitance | VDS=20V, VGS=0V, f=1MHz | --- | 3972 | --- | pF |
| Coss | Capacitance Output | --- | 1119 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 82 | --- |
