WSD40120DN56 N-kanala 40V 120A DFN5X6-8 WINSOK MOSFET
Pêşniyara hilberê WINSOK MOSFET
Voltaja WSD40120DN56 MOSFET 40V e, niha 120A ye, berxwedan 1.85mΩ ye, kanal kanalek N e, û pakêt DFN5X6-8 e.
Herêmên serîlêdanê yên WINSOK MOSFET
Cixareyên elektronîkî MOSFET, şarjkirina bêtêl MOSFET, dronên MOSFET, lênihêrîna bijîjkî MOSFET, şarjkerên gerîdeyê MOSFET, kontrolker MOSFET, hilberên dîjîtal MOSFET, alavên piçûk ên malê MOSFET, elektronîkên xerîdar MOSFET.
WINSOK MOSFET bi hejmarên din ên materyalê yên brandê re têkildar e
AOS MOSFET AON6234,AON6232,AON623.Onsemi,FAIRCHILD MOSFET NVMFS5C442NL.VISHAY MOSFET SiRA52ADP,SiJA52ADP.STMicroelectronics MOSFET STL12N4LF4SHOSFET STL12N4XP4SHOSFET. PB.PANJIT MOSFET PJQ544.NIKO-SEM MOSFET PKCSBB.POTENS Semiconductor MOSFET PDC496X.
Parametreyên MOSFET
| Nîşan | Parametre | Rating | Units |
| VDS | Drain-Source Voltage | 40 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID@TC=25℃ | Berdewam Drain Current, VGS@ 10V1,7 | 120 | A |
| ID@TC=100℃ | Berdewam Drain Current, VGS@ 10V1,7 | 100 | A |
| IDM | Pulsed Drain Current2 | 400 | A |
| EAS | Enerjiya Avalanche ya Single Pulse3 | 240 | mJ |
| IAS | Avalanche Current | 31 | A |
| PD@TC=25℃ | Tevahiya Tevahiya Hêzê4 | 104 | W |
| TSTG | Range Germahiya Storage | -55 heta 150 | ℃ |
| TJ | Range Germahiya Junction Operating | -55 heta 150 | ℃ |
| Nîşan | Parametre | Şertên | Min. | Tîp. | Max. | Yekbûn |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 40 | --- | --- | V |
| △BVDSS/△TJ | BVDSSGermahiya Germiya | Çavkanî ji bo 25℃, ID=1 mA | --- | 0.043 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V, ID=30A | --- | 1.85 | 2.4 | mΩ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=4.5V, ID=20A | --- | 2.5 | 3.3 | mΩ |
| VGS(th) | Gate Threshold Voltage | VGS=VDS, ID=250uA | 1.5 | 1.8 | 2.5 | V |
| △VGS(th) | VGS(th)Germahiya Germiya | --- | -6.94 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=32V, VGS=0V, TJ=25℃ | --- | --- | 2 | uA |
| VDS=32V, VGS=0V, TJ=55℃ | --- | --- | 10 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS= 5V, ID=20A | --- | 55 | --- | S |
| Rg | Berxwedana Gate | VDS=0V, VGS=0V, f=1MHz | --- | 1.1 | 2 | Ω |
| Qg | Tevahiya Barê Deriyê (10V) | VDS=20V, VGS=10V, ID=10A | --- | 76 | 91 | nC |
| Qgs | Dergeh-Çavkanî Charge | --- | 12 | 14.4 | ||
| Qgd | Dergeh-Drain Charge | --- | 15.5 | 18.6 | ||
| Td(li ser) | Demjimêra Derengiya Vemirandinê | VDD=30V, VGEN=10V, RG=1Ω, ID=1A,RL=15Ω. | --- | 20 | 24 | ns |
| Tr | Dema Rabûnê | --- | 10 | 12 | ||
| Td(off) | Dema Derengmayînê Vemirandin | --- | 58 | 69 | ||
| Tf | Fall Time | --- | 34 | 40 | ||
| Ciss | Input Capacitance | VDS=20V, VGS=0V, f=1MHz | --- | 4350 | --- | pF |
| Coss | Capacitance Output | --- | 690 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 370 | --- |
