WSD30300DN56G N-kanala 30V 300A DFN5X6-8 WINSOK MOSFET

berhemên

WSD30300DN56G N-kanala 30V 300A DFN5X6-8 WINSOK MOSFET

şiroveya kurt:

Hejmara Beşê:WSD30300DN56G

BVDSS:30V

Nasname:300A

RDSON:0.7mΩ 

Qenal:N-kanala

Pakêt:DFN5X6-8


Detail Product

Bikaranînî

Tags Product

Pêşniyara hilberê WINSOK MOSFET

Voltaja WSD20100DN56 MOSFET 20V e, niha 90A ye, berxwedan 1.6mΩ ye, kanal kanalek N e, û pakêt DFN5X6-8 e.

Herêmên serîlêdanê yên WINSOK MOSFET

Cixareyên elektronîkî MOSFET, dronên MOSFET, amûrên elektrîkê MOSFET, çekên fascia MOSFET, PD MOSFET, amûrên piçûk ên malê MOSFET.

WINSOK MOSFET bi hejmarên din ên materyalê yên brandê re têkildar e

AOS MOSFET AON6572.

POTENS Semiconductor MOSFET PDC394X.

Parametreyên MOSFET

Nîşan

Parametre

Rating

Units

VDS

Drain-Source Voltage

20

V

VGS

Gate-Source Voltage

±12

V

ID@TC=25℃

Current Drain Continuous1

90

A

ID@TC=100℃

Current Drain Continuous1

48

A

IDM

Pulsed Drain Current2

270

A

EAS

Enerjiya Avalanche ya Single Pulse3

80

mJ

IAS

Avalanche Current

40

A

PD@TC=25℃

Tevahiya Tevahiya Hêzê4

83

W

TSTG

Range Germahiya Storage

-55 heta 150

TJ

Range Germahiya Junction Operating

-55 heta 150

RθJA

Berxwedana Termal Junction-ambient1(t10S)

20

/W

RθJA

Berxwedana Termal Junction-ambient1(Dewleta domdar)

55

/W

RθJC

Berxwedana Termal Junction-doz1

1.5

/W

 

Nîşan

Parametre

Şertên

Min

Tîp

Max

Yekbûn

BVDSS

Drain-Source Breakdown Voltage VGS=0V, ID=250uA

20

23

---

V

VGS(th)

Gate Threshold Voltage VGS=VDS, ID =250uA

0.5

0.68

1.0

V

RDS(ON)

Static Drain-Source On-Resistance2 VGS=10V, ID=20A

---

1.6

2.0

RDS(ON)

Static Drain-Source On-Resistance2 VGS=4.5V, ID=20A  

1.9

2.5

RDS(ON)

Static Drain-Source On-Resistance2 VGS=2.5V, ID=20A

---

2.8

3.8

IDSS

Drain-Source Leakage Current VDS=16V, VGS=0V, TJ=25

---

---

1

uA

VDS=16V, VGS=0V, TJ=125

---

---

5

IGSS

Gate-Source Leakage Current VGS=±10V, VDS=0V

---

---

±10

uA

Rg

Berxwedana Gate VDS=0V, VGS=0V, f=1MHz

---

1.2

---

Ω

Qg

Tevahiya Barê Deriyê (10V) VDS=15V, VGS=10V, ID=20A

---

77

---

nC

Qgs

Dergeh-Çavkanî Charge

---

8.7

---

Qgd

Dergeh-Drain Charge

---

14

---

Td(li ser)

Demjimêra Derengiya Vemirandinê VDD=15V, VGS=10V, RG=3,

Nasname=20A

---

10.2

---

ns

Tr

Dema Rabûnê

---

11.7

---

Td(off)

Dema Derengmayînê Vemirandin

---

56.4

---

Tf

Fall Time

---

16.2

---

Ciss

Input Capacitance VDS=10V, VGS=0V, f=1MHz

---

4307

---

pF

Coss

Capacitance Output

---

501

---

Crss

Reverse Transfer Capacitance

---

321

---

IS

Berdewam Çavkanî Current1,5 VG=VD=0V, Hêza Hêza

---

---

50

A

VSD

Diode Forward Voltage2 VGS=0V, IS=1A, TJ=25

---

---

1.2

V

trr

Demjimêra Reverse Recovery IF=20A, di/dt=100A/µs,

TJ=25

---

22

---

nS

Qrr

Reverse Recovery Charge

---

72

---

nC


  • Pêşî:
  • Piştî:

  • Peyama xwe li vir binivîse û ji me re bişîne