WSD3023DN56 N-Ch û P-Kanala 30V/-30V 14A/-12A DFN5*6-8 WINSOK MOSFET
Danasîna Giştî
WSD3023DN56 xendek N-ch û P-ch MOSFET-a herî performansa herî bilind e ku bi dendika hucreyê ya pir bilind e, ku ji bo piraniya serîlêdanên veguherîner ên hevdemî yên hevdemî RDSON û berdêla dergehê peyda dike. WSD3023DN56 hewcedariya RoHS û Hilbera Kesk 100% EAS bi pêbaweriya fonksiyonê ya bêkêmasî ya pejirandî ve hatî garantî kirin.
Features
Teknolojiya Xendek bi tîrêjiya hucreya bilind a pêşkeftî, Barkirina Deriyê Super Kêm, Kêmbûna bandora CdV/dt ya hêja, 100% EAS Garantîkirî, Amûra Kesk Berdest e.
Applications
Veguhezkera Buckê ya Hevdem-Xala-Frekansa Bilind ji bo MB/NB/UMPC/VGA, Pergala Hêza DC-DC ya Torê, Veguheztina ronahiya paşde ya CCFL, Dron, motor, elektronîkên otomotîkê, alavên sereke.
hejmara materyalê ya têkildar
PANJIT PJQ5606
Parametreyên girîng
| Nîşan | Parametre | Rating | Units | |
| N-Ch | P-Ch | |||
| VDS | Drain-Source Voltage | 30 | -30 | V |
| VGS | Gate-Source Voltage | ±20 | ±20 | V |
| ID | Berdewam Drain Herika, VGS(NP)=10V,Ta=25℃ | 14* | -12 | A |
| Berdewam Drain Herika, VGS(NP)=10V,Ta=70℃ | 7.6 | -9.7 | A | |
| IDP a | Cureya Drain ya Pulse Tested, VGS(NP)=10V | 48 | -48 | A |
| EAS c | Enerjiya Avalanche, Nebza Yekane, L=0.5mH | 20 | 20 | mJ |
| IAS c | Herikîna berfê, nebza yekane, L=0.5mH | 9 | -9 | A |
| PD | Tevahiya Hêzê Disipation, Ta = 25℃ | 5.25 | 5.25 | W |
| TSTG | Range Germahiya Storage | -55 heta 175 | -55 heta 175 | ℃ |
| TJ | Range Germahiya Junction Operating | 175 | 175 | ℃ |
| RqJA b | Berxwedana Termal-Girêdana hawirdorê, Dewleta domdar | 60 | 60 | ℃/W |
| RqJC | Berxwedana Termal-Girêdana Dozê, Dewleta domdar | 6.25 | 6.25 | ℃/W |
| Nîşan | Parametre | Şertên | Min. | Tîp. | Max. | Yekbûn |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 30 | --- | --- | V |
| RDS(ON)d | Static Drain-Source On-Resistance | VGS=10V, ID=8A | --- | 14 | 18.5 | mΩ |
| VGS=4.5V, ID=5A | --- | 17 | 25 | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS, ID =250uA | 1.3 | 1.8 | 2.3 | V |
| IDSS | Drain-Source Leakage Current | VDS=20V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=20V, VGS=0V, TJ=85℃ | --- | --- | 30 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| Rg | Berxwedana Gate | VDS=0V, VGS=0V, f=1MHz | --- | 1.7 | 3.4 | Ω |
| Qge | Tevahiya Barê Gate | VDS=15V, VGS=4.5V, IDS=8A | --- | 5.2 | --- | nC |
| Qgse | Dergeh-Çavkanî Charge | --- | 1.0 | --- | ||
| Qgde | Dergeh-Drain Charge | --- | 2.8 | --- | ||
| Td(li)e | Demjimêra Dereng-On | VDD=15V,RL=15R, IDS=1A,VGEN=10V, RG=6R. | --- | 6 | --- | ns |
| Tre | Dema Rabûnê | --- | 8.6 | --- | ||
| Td(off)e | Dema Derengiya Vemirandinê | --- | 16 | --- | ||
| Tfe | Fall Time | --- | 3.6 | --- | ||
| Cisse | Input Capacitance | VDS=15V, VGS=0V, f=1MHz | --- | 545 | --- | pF |
| Cosse | Capacitance Output | --- | 95 | --- | ||
| Crsse | Reverse Transfer Capacitance | --- | 55 | --- |
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