WSD3023DN56 N-Ch û P-Kanala 30V/-30V 14A/-12A DFN5*6-8 WINSOK MOSFET

şiroveya kurt:

Hejmara Model:WSD3023DN56

BVDSS:30V/-30V

RDSON:14mΩ/23mΩ

Nasname:14A/-12A

Qenal:N-Ch û P-Channel

Pakêt:DFN5 * 6-8

Kurteya Hilberê:Voltaja WSD3023DN56 MOSFET 30V / -30V e, niha 14A / -12A ye, berxwedan 14mΩ / 23mΩ ye, kanal N-Ch û P-Channel e, û pakêt DFN5 * 6-8 e.

Serlêdan:Drone, motor, elektronîkên otomotîkê, amûrên sereke.

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Detail Product

Bikaranînî

Tags Product

Danasîna Giştî

WSD3023DN56 xendek N-ch û P-ch MOSFET-a herî performansa herî bilind e ku bi dendika hucreya pir bilind e, ku ji bo piraniya serîlêdanên veguhezkarê hevdemî yên hevdemî RDSON û berdêla dergehek hêja peyda dike.WSD3023DN56 hewcedariya RoHS û Hilbera Kesk 100% EAS bi pêbaweriya fonksiyonê ya bêkêmasî ya pejirandî ve hatî garantî kirin.

Features

Teknolojiya Xendek bi tîrêjiya hucreya bilind a pêşkeftî, Barkirina Deriyê Super Low, Kêmbûna bandora CdV / dt ya hêja, 100% EAS Garantî, Amûra Kesk Berdest e.

Applications

Veguhezkara Buckê ya Hevdem-Xala-Frekansa Bilind a ji bo MB/NB/UMPC/VGA, Pergala Hêza DC-DC ya Torê, Veguheztina ronahiya paşde ya CCFL, Dron, motor, elektronîkên otomotîvê, alavên sereke.

hejmara materyalê ya têkildar

PANJIT PJQ5606

Parametreyên girîng

Nîşan	Parametre	Rating		Units
Nîşan	Parametre	N-Ch	P-Ch	Units
VDS	Drain-Source Voltage	30	-30	V
VGS	Gate-Source Voltage	±20	±20	V
ID	Berdewam Drain Herika, VGS(NP)=10V,Ta=25℃	14*	-12	A
ID	Berdewam Drain Herika, VGS(NP)=10V,Ta=70℃	7.6	-9.7	A
IDP a	Cureya Drain ya Pulse Tested, VGS(NP)=10V	48	-48	A
EAS c	Enerjiya Avalanche, Nebza Yekane, L=0.5mH	20	20	mJ
IAS c	Herika berfê, Nebza yekane, L=0.5mH	9	-9	A
PD	Tevahiya Hêzê Disipation, Ta = 25℃	5.25	5.25	W
TSTG	Range Germahiya Storage	-55 heta 175	-55 heta 175	℃
TJ	Range Germahiya Junction Operating	175	175	℃
RqJA b	Berxwedana Termal-Girêdana hawirdorê, Dewleta domdar	60	60	℃/W
RqJC	Berxwedana Termal-Girêdana Dozê, Dewleta domdar	6.25	6.25	℃/W

Nîşan	Parametre	Şertên	Min.	Tîp.	Max.	Yekbûn
BVDSS	Drain-Source Breakdown Voltage	VGS=0V, ID=250uA	30	---	---	V
RDS(ON)d	Static Drain-Source On-Resistance	VGS=10V, ID=8A	---	14	18.5	mΩ
RDS(ON)d	Static Drain-Source On-Resistance	VGS=4.5V, ID=5A	---	17	25	mΩ
VGS(th)	Gate Threshold Voltage	VGS=VDS, ID =250uA	1.3	1.8	2.3	V
IDSS	Drain-Source Leakage Current	VDS=20V, VGS=0V, TJ=25℃	---	---	1	uA
IDSS	Drain-Source Leakage Current	VDS=20V, VGS=0V, TJ=85℃	---	---	30	uA
IGSS	Gate-Source Leakage Current	VGS=±20V, VDS=0V	---	---	±100	nA
Rg	Berxwedana Gate	VDS=0V, VGS=0V, f=1MHz	---	1.7	3.4	Ω
Qge	Tevahiya Barê Gate	VDS=15V, VGS=4.5V, IDS=8A	---	5.2	---	nC
Qgse	Dergeh-Çavkanî Charge		---	1.0	---
Qgde	Dergeh-Drain Charge		---	2.8	---
Td(li)e	Demjimêra Derengiya Vemirandinê	VDD=15V,RL=15R, IDS=1A,VGEN=10V, RG=6R.	---	6	---	ns
Tre	Dema Rabûnê		---	8.6	---
Td(off)e	Dema Derengmayînê Vemirandin		---	16	---
Tfe	Fall Time		---	3.6	---
Cisse	Input Capacitance	VDS=15V, VGS=0V, f=1MHz	---	545	---	pF
Cosse	Capacitance Output		---	95	---
Crsse	Reverse Transfer Capacitance		---	55	---