WSD30160DN56 N-kanala 30V 120A DFN5X6-8 WINSOK MOSFET
Pêşniyara hilberê WINSOK MOSFET
Voltaja WSD30160DN56 MOSFET 30V e, niha 120A ye, berxwedan 1.9mΩ ye, kanal kanalek N e, û pakêt DFN5X6-8 e.
Herêmên serîlêdanê yên WINSOK MOSFET
Cixareyên elektronîkî MOSFET, şarjkirina bêtêl MOSFET, dronên MOSFET, lênihêrîna bijîjkî MOSFET, şarjkerên gerîdeyê MOSFET, kontrolker MOSFET, hilberên dîjîtal MOSFET, alavên piçûk ên malê MOSFET, elektronîkên xerîdar MOSFET.
WINSOK MOSFET bi hejmarên din ên materyalê yên brandê re têkildar e
AOS MOSFET AON6382,AON6384,AON644A,AON6548.
Onsemi,FIRCHILD MOSFET NTMFS4834N,NTMFS4C5N.
TOSHIBA MOSFET TPH2R93PL.
PANJIT MOSFET PJQ5426.
NIKO-SEM MOSFET PKE1BB.
POTENS Semiconductor MOSFET PDC392X.
Parametreyên MOSFET
| Nîşan | Parametre | Rating | Units |
| VDS | Drain-Source Voltage | 30 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID@TC=25℃ | Berdewam Drain Current, VGS@ 10V1,7 | 120 | A |
| ID@TC=100℃ | Berdewam Drain Current, VGS@ 10V1,7 | 68 | A |
| IDM | Pulsed Drain Current2 | 300 | A |
| EAS | Enerjiya Avalanche ya Single Pulse3 | 128 | mJ |
| IAS | Avalanche Current | 50 | A |
| PD@TC=25℃ | Tevahiya Tevahiya Hêzê4 | 62.5 | W |
| TSTG | Range Germahiya Storage | -55 heta 150 | ℃ |
| TJ | Range Germahiya Junction Operating | -55 heta 150 | ℃ |
| Nîşan | Parametre | Şertên | Min. | Tîp. | Max. | Yekbûn |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 30 | --- | --- | V |
| △BVDSS/△TJ | BVDSSGermahiya Germiya | Çavkanî ji bo 25℃, ID=1 mA | --- | 0.02 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V, ID=20A | --- | 1.9 | 2.5 | mΩ |
| VGS=4,5V, ID=15A | --- | 2.9 | 3.5 | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS, ID=250uA | 1.2 | 1.7 | 2.5 | V |
| △VGS(th) | VGS(th)Germahiya Germiya | --- | -6.1 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=24V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=24V, VGS=0V, TJ=55℃ | --- | --- | 5 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS= 5V, ID=10A | --- | 32 | --- | S |
| Rg | Berxwedana Gate | VDS=0V, VGS=0V, f=1MHz | --- | 0.8 | 1.5 | Ω |
| Qg | Tevahiya Barkirina Deriyê (4.5V) | VDS=15V, VGS=4,5V, ID=20A | --- | 38 | --- | nC |
| Qgs | Dergeh-Çavkanî Charge | --- | 10 | --- | ||
| Qgd | Dergeh-Drain Charge | --- | 13 | --- | ||
| Td(li ser) | Demjimêra Derengiya Vemirandinê | VDD=15V, VGEN=10V, RG=6Ω, ID=1A, RL=15Ω. | --- | 25 | --- | ns |
| Tr | Dema Rabûnê | --- | 23 | --- | ||
| Td(off) | Dema Derengmayînê Vemirandin | --- | 95 | --- | ||
| Tf | Fall Time | --- | 40 | --- | ||
| Ciss | Input Capacitance | VDS=15V, VGS=0V, f=1MHz | --- | 4900 | --- | pF |
| Coss | Capacitance Output | --- | 1180 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 530 | --- |
