WSD30150ADN56 N-kanala 30V 145A DFN5X6-8 WINSOK MOSFET
Pêşniyara hilberê WINSOK MOSFET
Voltaja WSD30150DN56 MOSFET 30V e, niha 150A ye, berxwedan 1.8mΩ ye, kanal kanalek N e, û pakêt DFN5X6-8 e.
Herêmên serîlêdanê yên WINSOK MOSFET
E-cixare MOSFET, şarjkirina bêtêlê MOSFET, dronên MOSFET, lênihêrîna tibbî MOSFET, şarjkerên gerîdeyê MOSFET, kontrolker MOSFET, hilberên dîjîtal MOSFET, alavên piçûk ên malê MOSFET, elektronîkên xerîdar MOSFET.
WINSOK MOSFET bi hejmarên din ên materyalê yên marqeyê re têkildar e
AOS MOSFET AON6512,AONS3234.
Onsemi, FAIRCHILD MOSFET FDMC81DCCM.
NXP MOSFET PSMN1R7-3YL.
TOSHIBA MOSFET TPH1R43NL.
PANJIT MOSFET PJQ5428.
NIKO-SEM MOSFET PKC26BB,PKE24BB.
POTENS Semiconductor MOSFET PDC392X.
Parametreyên MOSFET
Nîşan | Parametre | Rating | Units |
VDS | Drain-Source Voltage | 30 | V |
VGS | Gate-Source Voltage | ±20 | V |
ID@TC=25℃ | Berdewam Drain Current, VGS@ 10V1,7 | 150 | A |
ID@TC=100℃ | Berdewam Drain Current, VGS@ 10V1,7 | 83 | A |
IDM | Pulsed Drain Current2 | 200 | A |
EAS | Enerjiya Avalanche ya Single Pulse3 | 125 | mJ |
IAS | Avalanche Current | 50 | A |
PD@TC=25℃ | Tevahiya Tevahiya Hêzê4 | 62.5 | W |
TSTG | Range Germahiya Storage | -55 heta 150 | ℃ |
TJ | Range Germahiya Junction Operating | -55 heta 150 | ℃ |
Nîşan | Parametre | Şertên | Min. | Tîp. | Max. | Yekbûn |
BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 30 | --- | --- | V |
△BVDSS/△TJ | BVDSSGermahiya Germiya | Çavkanî ji bo 25℃, ID=1 mA | --- | 0.02 | --- | V/℃ |
RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V, ID=20A | --- | 1.8 | 2.4 | mΩ |
VGS=4,5V, ID=15A | 2.4 | 3.2 | ||||
VGS(th) | Gate Threshold Voltage | VGS=VDS, ID=250uA | 1.4 | 1.7 | 2.5 | V |
△VGS(th) | VGS(th)Germahiya Germiya | --- | -6.1 | --- | mV/℃ | |
IDSS | Drain-Source Leakage Current | VDS=24V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
VDS=24V, VGS=0V, TJ=55℃ | --- | --- | 5 | |||
IGSS | Gate-Source Leakage Current | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
gfs | Forward Transconductance | VDS= 5V, ID=10A | --- | 27 | --- | S |
Rg | Berxwedana Gate | VDS=0V, VGS=0V, f=1MHz | --- | 0.8 | 1.5 | Ω |
Qg | Tevahiya Barkirina Deriyê (4,5V) | VDS=15V, VGS=4,5V, ID=30A | --- | 26 | --- | nC |
Qgs | Dergeh-Çavkanî Charge | --- | 9.5 | --- | ||
Qgd | Dergeh-Drain Charge | --- | 11.4 | --- | ||
Td(li ser) | Demjimêra Dereng-On | VDD=15V, VGEN=10V, RG=6Ω, ID=1A, RL=15Ω. | --- | 20 | --- | ns |
Tr | Dema Rabûnê | --- | 12 | --- | ||
Td(off) | Dema Derengiya Vemirandinê | --- | 69 | --- | ||
Tf | Fall Time | --- | 29 | --- | ||
Ciss | Input Capacitance | VDS=15V, VGS=0V, f=1MHz | 2560 | 3200 | 3850 | pF |
Coss | Capacitance Output | 560 | 680 | 800 | ||
Crss | Reverse Transfer Capacitance | 260 | 320 | 420 |