WSD30150ADN56 N-kanala 30V 145A DFN5X6-8 WINSOK MOSFET

berhemên

WSD30150ADN56 N-kanala 30V 145A DFN5X6-8 WINSOK MOSFET

şiroveya kurt:

Hejmara Beşê:WSD30150ADN56

BVDSS:30V

Nasname:145A

RDSON:2.2 mΩ 

Qenal:N-kanala

Pakêt:DFN5X6-8


Detail Product

Bikaranînî

Tags Product

Pêşniyara hilberê WINSOK MOSFET

Voltaja WSD30150DN56 MOSFET 30V e, niha 150A ye, berxwedan 1.8mΩ ye, kanal kanalek N e, û pakêt DFN5X6-8 e.

Herêmên serîlêdanê yên WINSOK MOSFET

E-cixare MOSFET, şarjkirina bêtêlê MOSFET, dron MOSFET, lênihêrîna tibbî MOSFET, şarjkerên gerîdeyê MOSFET, kontrolker MOSFET, hilberên dîjîtal MOSFET, alavên piçûk ên malê MOSFET, elektronîkên xerîdar MOSFET.

WINSOK MOSFET bi hejmarên din ên materyalê yên brandê re têkildar e

AOS MOSFET AON6512,AONS3234.

Onsemi, FAIRCHILD MOSFET FDMC81DCCM.

NXP MOSFET PSMN1R7-3YL.

TOSHIBA MOSFET TPH1R43NL.

PANJIT MOSFET PJQ5428.

NIKO-SEM MOSFET PKC26BB,PKE24BB.

POTENS Semiconductor MOSFET PDC392X.

Parametreyên MOSFET

Nîşan

Parametre

Rating

Units

VDS

Drain-Source Voltage

30

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25

Berdewam Drain Current, VGS@ 10V1,7

150

A

ID@TC=100

Berdewam Drain Current, VGS@ 10V1,7

83

A

IDM

Pulsed Drain Current2

200

A

EAS

Enerjiya Avalanche ya Single Pulse3

125

mJ

IAS

Avalanche Current

50

A

PD@TC=25

Tevahiya Tevahiya Hêzê4

62.5

W

TSTG

Range Germahiya Storage

-55 heta 150

TJ

Range Germahiya Junction Operating

-55 heta 150

 

Nîşan

Parametre

Şertên

Min.

Tîp.

Max.

Yekbûn

BVDSS

Drain-Source Breakdown Voltage VGS=0V, ID=250uA

30

---

---

V

BVDSS/△TJ

BVDSSGermahiya Germiya Çavkanî ji bo 25, ID=1 mA

---

0.02

---

V/

RDS(ON)

Static Drain-Source On-Resistance2 VGS=10V, ID=20A

---

1.8

2.4 mΩ
VGS=4,5V, ID=15A  

2.4

3.2

VGS(th)

Gate Threshold Voltage VGS=VDS, ID=250uA

1.4

1.7

2.5

V

VGS(th)

VGS(th)Germahiya Germiya

---

-6.1

---

mV/

IDSS

Drain-Source Leakage Current VDS=24V, VGS=0V, TJ=25

---

---

1

uA

VDS=24V, VGS=0V, TJ=55

---

---

5

IGSS

Gate-Source Leakage Current VGS=±20V, VDS=0V

---

---

±100

nA

gfs

Forward Transconductance VDS= 5V, ID=10A

---

27

---

S

Rg

Berxwedana Gate VDS=0V, VGS=0V, f=1MHz

---

0.8

1.5

Ω

Qg

Tevahiya Barkirina Deriyê (4.5V) VDS=15V, VGS=4,5V, ID=30A

---

26

---

nC

Qgs

Dergeh-Çavkanî Charge

---

9.5

---

Qgd

Dergeh-Drain Charge

---

11.4

---

Td(li ser)

Demjimêra Derengiya Vemirandinê VDD=15V, VGEN=10V, RG=6Ω, ID=1A, RL=15Ω.

---

20

---

ns

Tr

Dema Rabûnê

---

12

---

Td(off)

Dema Derengmayînê Vemirandin

---

69

---

Tf

Fall Time

---

29

---

Ciss

Input Capacitance VDS=15V, VGS=0V, f=1MHz 2560 3200

3850

pF

Coss

Capacitance Output

560

680

800

Crss

Reverse Transfer Capacitance

260

320

420


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