WSD25280DN56G N-kanala 25V 280A DFN5X6-8 WINSOK MOSFET

berhemên

WSD25280DN56G N-kanala 25V 280A DFN5X6-8 WINSOK MOSFET

şiroveya kurt:

Hejmara Beşê:WSD25280DN56G

BVDSS:25V

Nasname:280A

RDSON:0.7mΩ 

Qenal:N-kanala

Pakêt:DFN5X6-8


Detail Product

Bikaranînî

Tags Product

Pêşniyara hilberê WINSOK MOSFET

Voltaja WSD25280DN56G MOSFET 25V e, niha 280A ye, berxwedan 0.7mΩ ye, kanal kanalek N e, û pakêt DFN5X6-8 e.

Herêmên serîlêdanê yên WINSOK MOSFET

Frequency High Point-of-Load Synchronous,Buck Converter,Networking System Power DC-DC,Serlêdana Amûra Hêzê,Cixareya elektronîk MOSFET, şarjkirina bêtêlê MOSFET, dron MOSFET, lênihêrîna bijîşkî MOSFET, şarjkerên gerîdeyê MOSFET, kontrolker MOSFET, hilberên dîjîtal MOSFET, alavên piçûk ên malê MOSFET, elektronîkên xerîdar MOSFET.

WINSOK MOSFET bi hejmarên din ên materyalê yên brandê re têkildar e

Nxperian MOSFET PSMN1R-4ULD.

POTENS Semiconductor MOSFET PDC262X.

Parametreyên MOSFET

Nîşan

Parametre

Rating

Units

VDS

Drain-Source Voltage

25

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25

Current Drain Continuous(Silicon Limited1,7

280

A

ID@TC=70

Berdewamiya Drain Current (Silicon Limited1,7

190

A

IDM

Pulsed Drain Current2

600

A

EAS

Enerjiya Avalanche ya Single Pulse3

1200

mJ

IAS

Avalanche Current

100

A

PD@TC=25

Tevahiya Tevahiya Hêzê4

83

W

TSTG

Range Germahiya Storage

-55 heta 150

TJ

Range Germahiya Junction Operating

-55 heta 150

 

Nîşan

Parametre

Şertên

Min.

Tîp.

Max.

Yekbûn

BVDSS

Drain-Source Breakdown Voltage VGS=0V, ID=250uA

25

---

---

V

BVDSS/△TJ

BVDSSGermahiya Germiya Çavkanî ji bo 25, ID=1 mA

---

0.022

---

V/

RDS(ON)

Static Drain-Source On-Resistance2 VGS=10V, ID=20A

---

0.7

0.9 mΩ
VGS=4,5V, ID=20A

---

1.4

1.9

VGS(th)

Gate Threshold Voltage VGS=VDS, ID=250uA

1.0

---

2.5

V

VGS(th)

VGS(th)Germahiya Germiya

---

-6.1

---

mV/

IDSS

Drain-Source Leakage Current VDS=20V, VGS=0V, TJ=25

---

---

1

uA

VDS=20V, VGS=0V, TJ=55

---

---

5

IGSS

Gate-Source Leakage Current VGS=±20V, VDS=0V

---

---

±100

nA

gfs

Forward Transconductance VDS= 5V, ID=10A

---

40

---

S

Rg

Berxwedana Gate VDS=0V, VGS=0V, f=1MHz

---

3.8

1.5

Ω

Qg

Tevahiya Barkirina Deriyê (4.5V) VDS=15V, VGS=4,5V, ID=20A

---

72

---

nC

Qgs

Dergeh-Çavkanî Charge

---

18

---

Qgd

Dergeh-Drain Charge

---

24

---

Td(li ser)

Demjimêra Derengiya Vemirandinê VDD=15V, VGEN=10V,RG=1Ω, ID=10A

---

33

---

ns

Tr

Dema Rabûnê

---

55

---

Td(off)

Dema Derengmayînê Vemirandin

---

62

---

Tf

Fall Time

---

22

---

Ciss

Input Capacitance VDS=15V, VGS=0V, f=1MHz

---

7752

---

pF

Coss

Capacitance Output

---

1120

---

Crss

Reverse Transfer Capacitance

---

650

---

 

 


  • Pêşî:
  • Piştî:

  • Peyama xwe li vir binivîse û ji me re bişîne