WSD25280DN56G N-kanala 25V 280A DFN5X6-8 WINSOK MOSFET
Pêşniyara hilberê WINSOK MOSFET
Voltaja WSD25280DN56G MOSFET 25V e, niha 280A ye, berxwedan 0.7mΩ ye, kanal kanalek N e, û pakêt DFN5X6-8 e.
Herêmên serîlêdanê yên WINSOK MOSFET
Frequency High Point-of-Load Synchronous,Buck Converter,Networking System Power DC-DC,Serlêdana Amûra Hêzê,cixareya elektronîk MOSFET, şarjkirina bêtêlê MOSFET, dronên MOSFET, lênihêrîna bijîşkî MOSFET, şarjkerên gerîdeyê MOSFET, kontrolker MOSFET, hilberên dîjîtal MOSFET, alavên piçûk ên malê MOSFET, elektronîkên xerîdar MOSFET.
WINSOK MOSFET bi hejmarên din ên materyalê yên marqeyê re têkildar e
Nxperian MOSFET PSMN1R-4ULD.
POTENS Semiconductor MOSFET PDC262X.
Parametreyên MOSFET
| Nîşan | Parametre | Rating | Units |
| VDS | Drain-Source Voltage | 25 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID@TC=25℃ | Current Drain Continuous(Silicon Limited）1,7 | 280 | A |
| ID@TC=70℃ | Berdewamiya Drain Current (Silicon Limited）1,7 | 190 | A |
| IDM | Pulsed Drain Current2 | 600 | A |
| EAS | Enerjiya Avalanche ya Single Pulse3 | 1200 | mJ |
| IAS | Avalanche Current | 100 | A |
| PD@TC=25℃ | Tevahiya Tevahiya Hêzê4 | 83 | W |
| TSTG | Range Germahiya Storage | -55 heta 150 | ℃ |
| TJ | Range Germahiya Junction Operating | -55 heta 150 | ℃ |
| Nîşan | Parametre | Şertên | Min. | Tîp. | Max. | Yekbûn |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 25 | --- | --- | V |
| △BVDSS/△TJ | BVDSSGermahiya Germiya | Çavkanî ji bo 25℃, ID=1 mA | --- | 0.022 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V, ID=20A | --- | 0.7 | 0.9 | mΩ |
| VGS=4,5V, ID=20A | --- | 1.4 | 1.9 | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS, ID=250uA | 1.0 | --- | 2.5 | V |
| △VGS(th) | VGS(th)Germahiya Germiya | --- | -6.1 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=20V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=20V, VGS=0V, TJ=55℃ | --- | --- | 5 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS= 5V, ID=10A | --- | 40 | --- | S |
| Rg | Berxwedana Gate | VDS=0V, VGS=0V, f=1MHz | --- | 3.8 | 1.5 | Ω |
| Qg | Tevahiya Barkirina Deriyê (4,5V) | VDS=15V, VGS=4,5V, ID=20A | --- | 72 | --- | nC |
| Qgs | Dergeh-Çavkanî Charge | --- | 18 | --- | ||
| Qgd | Dergeh-Drain Charge | --- | 24 | --- | ||
| Td(li ser) | Demjimêra Dereng-On | VDD=15V, VGEN=10V,RG=1Ω, ID=10A | --- | 33 | --- | ns |
| Tr | Dema Rabûnê | --- | 55 | --- | ||
| Td(off) | Dema Derengiya Vemirandinê | --- | 62 | --- | ||
| Tf | Fall Time | --- | 22 | --- | ||
| Ciss | Input Capacitance | VDS=15V, VGS=0V, f=1MHz | --- | 7752 | --- | pF |
| Coss | Capacitance Output | --- | 1120 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 650 | --- |
