WSD20L120DN56 P-kanala -20V -120A DFN5*6-8 WINSOK MOSFET

şiroveya kurt:

Hejmara Model:WSD20L120DN56

BVDSS:-20V

RDSON:2.1 mΩ

Nasname:-120A

Qenal:P-kanala

Pakêt:DFN5 * 6-8

Kurteya Hilberê:MOSFET WSD20L120DN56 li -20 volt dixebitîne û herikîna -120 amp dikişîne. Ew berxwedanek 2.1 miliohms, kanalek P heye, û di pakêtek DFN5 * 6-8 de tê.

Serlêdan:E-cixare, şarjkerên bêtêl, motor, dron, alavên bijîjkî, şarjkerên gerîdeyê, kontrolker, amûrên dîjîtal, alavên piçûk, û elektronîkên xerîdar.

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Danasîna Giştî

WSD20L120DN56 P-Ch MOSFET-a performansa herî baş e ku bi avahiyek hucreya zencîreyek bilind e, ji bo pir karanîna veguhezkera buckê ya hevdemî RDSON û berdêla dergehek hêja dide. WSD20L120DN56 100% hewcedariyên EAS-ê ji bo RoHS û hilberên hawirdorê, bi erêkirina pêbaweriya tev-fonksiyonê pêk tîne.

Features

1, Teknolojiya Trench-ê ya hucreya bilind a pêşkeftî
2, Xerca Deriyê Super Low
3, Kêmbûna bandora CdV/dt ya hêja
4, 100% EAS Garantîkirî 5, Amûra Kesk Berdest e

Applications

Veguhezkera Buckê ya Hevdem a Xala Berbiçav ya Bilind ji bo MB/NB/UMPC/VGA, Pergala Hêza DC-DC ya Torayê, Guhestina Barkirinê, E-cixare, Chargera Bêtêl, Motor, Drone, Bijîjkî, Chargera Otomobîlan, Kontrolker, Berhemên dîjîtal, Amûrên Xanî yên Biçûk, Elektronîkên Serfkaran.

hejmara materyalê ya têkildar

AOS AON6411,NIKO PK5A7BA

Parametreyên girîng

Nîşan	Parametre	Rating		Units
Nîşan	Parametre	10s	Dewleta domdar	Units
VDS	Drain-Source Voltage	-20		V
VGS	Gate-Source Voltage	±10		V
ID@TC=25℃	Berdewam Drain Current, VGS @ -10V1	-120		A
ID@TC=100℃	Berdewam Drain Current, VGS @ -10V1	-69.5		A
ID@TA=25℃	Berdewam Drain Current, VGS @ -10V1	-25	-22	A
ID@TA=70℃	Berdewam Drain Current, VGS @ -10V1	-24	-18	A
IDM	Current Drain Pulsed2	-340		A
EAS	Single Pulse Avalanche Energy3	300		mJ
IAS	Avalanche Current	-36		A
PD@TC=25℃	Tevahiya Hêzê Disipation4	130		W
PD@TA=25℃	Tevahiya Hêzê Disipation4	6.8	6.25	W
TSTG	Range Germahiya Storage	-55 heta 150		℃
TJ	Range Germahiya Junction Operating	-55 heta 150		℃

Nîşan	Parametre	Şertên	Min.	Tîp.	Max.	Yekbûn
BVDSS	Drain-Source Breakdown Voltage	VGS=0V, ID=-250uA	-20	---	---	V
△BVDSS/△TJ	BVDSS Germahiya Germiya	Navnîşana 25℃, ID=-1mA	---	-0.0212	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance2	VGS=-4.5V, ID=-20A	---	2.1	2.7	mΩ
RDS(ON)	Static Drain-Source On-Resistance2					mΩ
		VGS=-2.5V, ID=-20A	---	2.8	3.7
VGS(th)	Gate Threshold Voltage	VGS=VDS, ID =-250uA	-0.4	-0.6	-1.0	V
		VGS=VDS, ID =-250uA
△VGS(th)	VGS (th) Germahiya Germiya		---	4.8	---	mV/℃
IDSS	Drain-Source Leakage Current	VDS=-20V, VGS=0V, TJ=25℃	---	---	-1	uA
IDSS	Drain-Source Leakage Current					uA
		VDS=-20V, VGS=0V, TJ=55℃	---	---	-6
IGSS	Gate-Source Leakage Current	VGS=±20V, VDS=0V	---	---	±100	nA
gfs	Forward Transconductance	VDS=-5V, ID=-20A	---	100	---	S
Rg	Berxwedana Gate	VDS=0V, VGS=0V, f=1MHz	---	2	5	Ω
Qg	Tevahiya Barê Deriyê (-4,5V)	VDS=-10V, VGS=-4.5V, ID=-20A	---	100	---	nC
Qgs	Dergeh-Çavkanî Charge		---	21	---
Qgd	Dergeh-Drain Charge		---	32	---
Td(li ser)	Demjimêra Dereng-On	VDD=-10V, VGEN=-4.5V, RG=3Ω ID=-1A,RL=0.5Ω	---	20	---	ns
Tr	Dema Rabûnê		---	50	---
Td(off)	Dema Derengiya Vemirandinê		---	100	---
Tf	Fall Time		---	40	---
Ciss	Input Capacitance	VDS=-10V, VGS=0V, f=1MHz	---	4950	---	pF
Coss	Capacitance Output		---	380	---
Crss	Reverse Transfer Capacitance		---	290	---