WSD100N15DN56G N-kanala 150V 100A DFN5X6-8 WINSOK MOSFET
Pêşniyara hilberê WINSOK MOSFET
Voltaja WSD100N15DN56G MOSFET 150V e, niha 100A ye, berxwedan 6mΩ ye, kanal kanalek N e, û pakêt DFN5X6-8 e.
Herêmên serîlêdanê yên WINSOK MOSFET
Dabînkirina hêza bijîşkî MOSFET, PDs MOSFET, dronên MOSFET, cixareyên elektronîkî MOSFET, alavên sereke MOSFET, û amûrên hêzê MOSFET.
Parametreyên MOSFET
| Nîşan | Parametre | Rating | Units |
| VDS | Drain-Source Voltage | 150 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID | Berdewam Drain Current, VGS@ 10V(TC=25℃) | 100 | A |
| IDM | Pulsed Drain Current | 360 | A |
| EAS | Enerjiya Avalanche ya Single Pulse | 400 | mJ |
| PD | Tevahiya hêzê...C=25℃) | 160 | W |
| RthJA | Berxwedana germî, girêdan-ambient | 62 | ℃/W |
| RθJC | Berxwedana germî, hevkêş-doza | 0.78 | ℃/W |
| TSTG | Range Germahiya Storage | -55 heta 175 | ℃ |
| TJ | Range Germahiya Junction Operating | -55 heta 175 | ℃ |
| Nîşan | Parametre | Şertên | Min. | Tîp. | Max. | Yekbûn |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 150 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V, ID=20A | --- | 9 | 12 | mΩ |
| VGS(th) | Gate Threshold Voltage | VGS=VDS, ID=250uA | 2.0 | 3.0 | 4.0 | V |
| IDSS | Drain-Source Leakage Current | VDS=100V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| Qg | Tevahiya Barê Gate | VDS=50V, VGS=10V, ID=20A | --- | 66 | --- | nC |
| Qgs | Dergeh-Çavkanî Charge | --- | 26 | --- | ||
| Qgd | Dergeh-Drain Charge | --- | 18 | --- | ||
| Td(li ser) | Demjimêra Derengiya Vemirandinê | VDD=50V,VGS=10V RG=2Ω, ID=20A | --- | 37 | --- | ns |
| Tr | Dema Rabûnê | --- | 98 | --- | ||
| Td(off) | Dema Derengmayînê Vemirandin | --- | 55 | --- | ||
| Tf | Fall Time | --- | 20 | --- | ||
| Ciss | Input Capacitance | VDS=30V, VGS=0V, f=1MHz | --- | 5450 | --- | pF |
| Coss | Capacitance Output | --- | 1730 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 195 | --- |
