WSD100N06GDN56 N-kanala 60V 100A DFN5X6-8 WINSOK MOSFET
Pêşniyara hilberê WINSOK MOSFET
Voltaja WSD100N06GDN56 MOSFET 60V e, niha 100A ye, berxwedan 3mΩ ye, kanal kanalek N e, û pakêt DFN5X6-8 e.
Herêmên serîlêdanê yên WINSOK MOSFET
Dabînkirina hêza bijîşkî MOSFET, PDs MOSFET, dronên MOSFET, cixareyên elektronîkî MOSFET, alavên sereke MOSFET, û amûrên hêzê MOSFET.
WINSOK MOSFET bi hejmarên din ên materyalê yên marqeyê re têkildar e
AOS MOSFET AON6264C,AON6264E,AON6266E,AONS6662.STMikroelektronîk MOSFET STL13N6F7,STL14N6F7.PANJIT MOSFET PSMQC33N6NS1.POTENS Semiconductor MOS69ET.
Parametreyên MOSFET
| Nîşan | Parametre | Rating | Units | ||
| VDS | Drain-Source Voltage | 60 | V | ||
| VGS | Gate-Source Voltage | ±20 | V | ||
| ID1,6 | Current Drain Continuous | TC=25°C | 100 | A | |
| TC=100°C | 65 | ||||
| IDM2 | Pulsed Drain Current | TC=25°C | 240 | A | |
| PD | Belavkirina Hêza herî zêde | TC=25°C | 83 | W | |
| TC=100°C | 50 | ||||
| IAS | Avalanche Current, Single Pulse | 45 | A | ||
| EAS3 | Enerjiya Avalanche ya Single Pulse | 101 | mJ | ||
| TJ | Germahiya herî zêde ya Junction | 150 | ℃ | ||
| TSTG | Range Germahiya Storage | -55 heta 150 | ℃ | ||
| RθJA1 | Têkiliya Berxwedana Termal a li hawîrdorê | Dewleta domdar | 55 | ℃/W | |
| RθJC1 | Berxwedana Termal-Junction to Case | Dewleta domdar | 1.5 | ℃/W | |
| Nîşan | Parametre | Şertên | Min. | Tîp. | Max. | Yekbûn | |
| Static | |||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250μA | 60 | V | |||
| IDSS | Zero Gate Voltage Drain Current | VDS = 48 V, VGS = 0V | 1 | μA | |||
| TJ=85°C | 30 | ||||||
| IGSS | Dergeh Leakage Current | VGS = ± 20V, VDS = 0V | ±100 | nA | |||
| Li ser Taybetmendiyan | |||||||
| VGS(TH) | Gate Threshold Voltage | VGS = VDS, IDS = 250 μA | 1.2 | 1.8 | 2.5 | V | |
| RDS (li ser)2 | Berxwedana Ser-dewletê Drain-Source | VGS = 10V, ID = 20A | 3.0 | 3.6 | mΩ | ||
| VGS = 4.5V, ID = 15A | 4.4 | 5.4 | mΩ | ||||
| Switching | |||||||
| Qg | Tevahiya Barê Gate | VDS=30V VGS=10V Nasname=20A | 58 | nC | |||
| Qgs | Dergeh-Tirş Charge | 16 | nC | ||||
| Qgd | Dergeh-Drain Charge | 4.0 | nC | ||||
| td (ser) | Demjimêra Derengiya Vemirandinê | VGEN=10V VDD=30V Nasname=20A RG=Ω | 18 | ns | |||
| tr | Demjimêra Rabûna Vemirandinê | 8 | ns | ||||
| td(off) | Demjimêra Derengiya Vemirandinê | 50 | ns | ||||
| tf | Demjimêra Payîzê ya Turn-off | 11 | ns | ||||
| Rg | berxwedana Gat | VGS=0V, VDS=0V, f=1MHz | 0.7 | Ω | |||
| Dynamic | |||||||
| Ciss | Di Capacitance de | VGS=0V VDS=30V f=1MHz | 3458 | pF | |||
| Coss | Out Capacitance | 1522 | pF | ||||
| Crss | Reverse Transfer Capacitance | 22 | pF | ||||
| Taybetmendiyên Drain-Source Diode û Nirxên herî zêde | |||||||
| IS1,5 | Berdewam Çavkanî Current | VG=VD=0V, Hêza Hêza | 55 | A | |||
| ISM | Çavkaniya Pulsed Current3 | 240 | A | ||||
| VSD2 | Diode Forward Voltage | ISD = 1A, VGS=0V | 0.8 | 1.3 | V | ||
| trr | Demjimêra Reverse Recovery | ISD=20A, dlSD/dt=100A/µs | 27 | ns | |||
| Qrr | Reverse Recovery Charge | 33 | nC | ||||
